IGBT Module U-Series 1700V / 225A 6 in one-package

www.DataSheet4U.com 6MBI225U-170 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1700V / 225A 6 in one-package Applications · Uninterruptible power supply · Inverter for Motor drive · AC and DC Servo drive amplifier · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1700 ±20 300 225 600 450 225 450 1040 +150 -40 to +125 3400 Unit V V A Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6) W °C VAC N·m Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R Conditions VGE=0V, VCE=1700V VCE=0V, VGE=±20V VCE=20V, IC=225mA VGE=15V, IC=225A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =900V IC=225A VGE=±15V RG=3 Ω VGE=0V IF=225A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 2.30 – 2.65 – 2.05 – 2.40 – 23 – 0.58 – 0.32 – 0.10 – 0.80 – 0.15 – 2.05 – 2.25 – 1.80 – 2.00 – 0.3 – 1.0 – 5000 465 495 3305 3375 Unit Max. 3.0 600 8.5 2.80 – 2.55 – – 1.20 0.60 – 1.50 0.30 2.80 – 2.55 – 0.6 – – 520 3450 mA nA V V Inverter Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Thermistor Reverse recovery time Lead resistance, terminal-chip*4 Resistance IF=225A T=25°C T=100°C T=25/50°C µs mΩ Ω Κ B value B *4:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.0167 Unit Max. 0.12 0.20 – °C/W °C/W °C/W *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 6MBI225U-170 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 600 600 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 500 Collector current : Ic [A] VGE=20V 15V Collector current : Ic [A] 500 VGE=20V 400 12V 300 15V 400 12V 300 200 10V 100 9V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 200 10V 100 9V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 600 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Collector - Emitter voltage : VCE [ V ] 500 T j=25°C Collector current : Ic [A] 400 T j=125°C 8 6 300 200 4 100 2 Ic=450A Ic=225A Ic=112.5A 5 10 15 20 25 0 0 1 2 3 4 5 0 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C 1000.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=900V, Ic=225A, Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies VGE 10.0 Cres 1.0 Coes 0.1 0 10 20 30 VCE 0 500 1000 1500 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 6MBI225U-170 Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=3Ω, Tj= 25°C 10000 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=3Ω, Tj=125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 toff ton tr 1000 toff ton tr tf 100 tf 100 10 0 100 200 300 400 Collector current : Ic [ A ] 10 0 100 200 300 400 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 120 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=3Ω Eoff(125°C) Switching time : ton, tr, toff, tf [ nsec ] 100 Eoff(25°C) Eon(125°C) Err(125°C) Err(25°C) 1000 toff ton tr 80 60 40 100 tf Eon(25°C) 20 10 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 0 0 100 200 300 400 500 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=225A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 3Ω ,Tj <= 125°C Stray inductance <= 100nH 150 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 600 100 Eoff Collector current : Ic [ A ] 100 450 300 50 150 Err 0 1 10 Gate resistance : Rg [ Ω ] 0 0 300 600 900 1200 1500 1800 Collector - Emitter voltage : VCE [ V ] 6MBI225U-170 IGBT Module Forward current vs. Forward on voltage (typ.) chip 600 1000 Reverse recovery characteristics (typ.) Vcc=900V, VGE=±15V, Rg=3Ω Forward current : IF [ A ] T j=25°C 400 T j=125°C 300 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 500 trr (125°C) trr (25°C) Irr (125°C) Irr (25°C) 200 100 0 0 1 2 3 4 Forward on voltage : VF [ V ] 100 0 100 200 300 400 500 600 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 FWD ] 100 Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ °C/W ] Resistance : R [ k 0.100 IGBT 10 0.010 1 0.001 0.001 0.010 0.100 1.000 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] Pulse width : Pw [ sec ] 6MBI225U-170 Outline Drawings, mm M629 IGBT Module Equivalent Circuit Schematic [Inverter] 2 4 6 [Thermister] 11 12 9 10 7 8 1 3 5