IGBT Module U-Series 1200V / 100A 6 in one-package

www.DataSheet4U.com 6MBI100UB-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 100A 6 in one-package Applications · Uninterruptible power supply · Inverter for Motor drive · AC and DC Servo drive amplifier · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 ±20 150 100 300 200 100 200 520 +150 -40 to +125 2500 3.5 Unit V V A Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 between thermistor and others *2 Screw Torque Mounting *3 1 device W °C VAC N·m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=100mA VGE=15V, IC=100A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=100A VGE=±15V RG=5.6 Ω VGE=0V IF=100A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 2.10 – 2.35 – 1.75 – 2.00 – 11 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.95 – 2.05 – 1.60 – 1.70 – – – 3.4 – 5000 465 495 3305 3375 Unit Max. 1.0 200 8.5 2.45 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.25 – 1.90 – 0.35 – – 520 3450 mA nA V V Inverter Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Thermistor Reverse recovery time Lead resistance, terminal-chip*4 Resistance IF=100A T=25°C T=100°C T=25/50°C µs mΩ Ω Κ B value B *4:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.05 Unit Max. 0.24 0.39 – °C/W °C/W °C/W *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 6MBI100UB-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 250 VGE=20V 15V 12V Collector current : Ic [A] 250 VGE=20V IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 200 Collector current : Ic [A] 200 15V 12V 150 10V 150 100 100 10V 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 250 T j=25°C T j=125°C 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 200 Collector current : Ic [A] Collector - Emitter voltage : VCE [ V ] 8 150 6 100 4 50 2 Ic=200A Ic=100A Ic= 50A 0 0 1 2 3 4 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C 100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] Cies 10.0 VGE Cres 1.0 Coes 0.1 0 10 20 30 0 0 200 VCE 400 600 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 6MBI100UB-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6 ohm, Tj= 25°C 10000 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6 ohm, Tj=125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 50 100 150 200 Collector current : Ic [ A ] 10 0 50 100 150 200 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6 ohm Eoff(125°C) Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 Eon(125°C) 15 Eoff(25°C) 10 Eon(25°C) tr 100 tf 5 Err(125°C) Err(25°C) 10 0.1 1.0 10.0 100.0 1000.0 0 0 50 100 150 200 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C 100 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 300 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 5.6 ohm ,Tj <= 125°C Eon Collector current : Ic [ A ] 1000.0 75 200 50 100 25 Eoff 0 0.1 1.0 10.0 100.0 Err 0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] Gate resistance : Rg [ Ω ] 6MBI100UB-120 Forward current vs. Forward on voltage (typ.) chip 250 T j=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=5.6 ohm 200 Forward current : IF [ A ] 150 T j=125°C 100 100 trr trr Irr Irr (125°C) (25°C) (125°C) (25°C) 50 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 50 100 150 200 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 FWD Temperature characteristic (typ.) 100 Thermal resistanse : Rth(j-c) [ °C/W ] IGBT 0.100 Resistance : R [ k ohm ] 0.010 0.100 1.000 10 0.010 1 0.001 0.001 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] Pulse width : Pw [ sec ] 6MBI100UB-120 Outline Drawings, mm M633 IGBT Module ( ) shows reference dimension. Equivalent Circuit Schematic 30,31,32 16,17,18 19 20 1 2 U 27,28,29 3 4 33,34,35 5 6 9 10 V 24,25,26 W 21,22,23 7 8 11 12 13,14,15