Description
VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1273 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1632-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA www.DataSheet4U.com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 1200 25 50 Unit V A A V µs °C -20 20 10 Junction temperature -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12E1273 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 25 A, RG = 33 Ω, VGE = ±15 V, Lσ = 120 nH, inductive load VCC = 600 V, IC = 25 A, RG = 47 Ω, VGE = ±15 V, Lσ = 120 nH, inductive load VCC = 600 V, IC = 25 A, VGE = ±15 V, RG = 33 Ω, Lσ = 120 nH, inductive load, FWD: ½ 5SLX12E1200 VCC = 600 V, IC = 25 A, VGE = ±15 V, RG = 47 Ω, Lσ = 120 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 25 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min 1200 1.7 typ max Unit V 2.0 2.2 2.3 100 V V µA µA nA V nC nF Ω ns ns ns ns 100 -200 4.5 195 2.01 0.14 0.08 10 95 100 70 70 295 355 65 95 2.1 200 6.5 VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 1 mA, VCE = VGE, Tvj = 25 °C IC = 25 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Turn-on switching energy Eon mJ 3.2 1.4 mJ 2.3 140 A www.DataSheet4U.com Turn-off switching energy Eoff Short circuit current 2) ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 900 V, VCEM ≤ 1200 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1632-00 June 05 page 2 of 5 5SMX 12E1273 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 6.6 x 6.5 5.1 x 5.0 1.2 x 1.2 130 ± 20 AlSi1 Al / Ti / Ni / Ag 4 1.8 mm mm mm µm µm µm LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing Emitter G www.DataSheet4U.com Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1632-00 June 05 page 3 of 5 5SMX 12E1273 50 50 VCE = 20V 25 °C 40 125 °C 40 30 IC [A] IC [A] 30 20 20 125 °C 10 10 25 °C VGE = 15V 0 0 1 2 VCE [V] 3 4 0 0 1 2 3 4 5 6 VGE [V] 7 8 9 10 11 12 Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 22 VCC = 600 V 20 RGon = 33 ohm RGoff = 47 ohm 18 VGE = ±15 V Tvj = 125 °C 16 www.DataSheet4U.com nH Lσ = 120 14 Eon, E off [mJ] Eon, E off [mJ] 12 10 8 6 4 Eoff 2 0 0 10 20 30 40 IC [A] 50 60 70 80 Eon 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 50 100 150 RG [ohm] 200 250 300 Eoff VCC = 600 V IC = 25 A VGE = ±15 V Tvj = 125 °C Lσ = 120 nH Eon Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1632-00 June 05 page 4 of 5 5SMX 12E1273 20 10 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V 15 VCC = 800 V VGE [V] C [nF] 1 Cies 10 Coes 0.1 Cres 5 IC = 25 A Tvj = 25 °C 0 0.00 0.05 0.10 Qg [µC] 0.15 0.20 0.01 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage www.DataSheet4U.com ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1632-00 June 05

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5SMX12E1273

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