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4N60 Datasheet

N-CHANNEL POWER MOSFET


4N60 Datasheet Preview


UNISONIC TECHNOLOGIES CO., LTD
4N60
4 Amps, 600 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5@VGS = 10 V
* Ultra low gate charge ( typical 15 nC )
* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
www.DataSheet4U.com
1
TO-220
1
TO-220F
*Pb-free plating product number: 4N60L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
4N60-TA3-T
4N60L-TA3-T
4N60-TF3-T
4N60L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
4N60L-TA 3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-061,E
Page 1

4N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
Avalanche Current - (Note 1)
VGSS
IAR
±30
4.4
V
A
Continuous Drain Current
TC = 25°C
TC = 100°C
ID
4.0 A
2.8 A
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)
Avalanche Energy, Single Pulsed (Note 2)
IDM
EAS
16 A
260 mJ
Avalanche Energy, Repetitive, Limited by TJMAX
Peak Diode Recovery dv/dt (Note 3)
EAR
dv/dt
10.6 mJ
4.5 V/ns
Power Dissipation (TC = 25°C)
Junction Temperature
PD 106 W
TJ +150
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
PARAMETER
SYMBOL
θJA
θJC
θCS
MIN
TYP
0.5
MAX
62.5
3
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC =25 , unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250 µA
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600 V
10 µA
100 µA
100 nA
-100 nA
BVDSS/ TJ ID = 250 µA, Referenced to 25°C
0.6 V/
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.2 A
VDS = 50 V, ID = 2.2 A (Note 4)
2.0 4.0
2.5
4.0
V
S
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
520 670
70 90
8 11
pF
pF
pF
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QDD
VDD = 300V, ID = 4.0 A, RG = 25
(Note 4, 5)
VDS= 480V,ID= 4.0A, VGS= 10 V
(Note 4, 5)
13 35 ns
45 100 ns
25 60 ns
35 80 ns
15 20 nC
3.4 nC
7.1 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-061,E
Page 2

4N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source- Drain Diode Ratings and Characteristics
Drain-Source Diode Forward Voltage
VSD
Maximum Continuous Drain-Source
Diode Forward Current
IS
VGS = 0 V, IS = 4.4 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR VGS = 0 V, IS = 4.4 A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/µs (Note 4)
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 25mH, IAS = 4.4A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 4.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.4 V
4.4 A
17.6 A
250 ns
1.5 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-061,E
Page 3

4N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-061,E
Page 4
Part Number 4N60
Manufactur UTC
Description N-CHANNEL POWER MOSFET
Total Page 8 Pages
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