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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD207
DESCRIPTION ¡¤ With TO-3 package ¡¤ Low collector saturation voltage APPLICATIONS ¡¤ For audio amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=¡æ )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
电半 固
PARAMETER
Collector-base voltage
导体
INCH
Collector-emitter voltage
Emitter-base voltage
E SEM ANG
Open base TC=75¡æ
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 60 60 6 5 50 150 -55~150
UNIT V V V A W ¡æ ¡æ
Open collector
Collector current Collector power dissipation
Junction temperature Storage temperature
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=60V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=5V 40 MIN 60 60 6 TYP.
3DD207
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
MAX
UNIT V V V
1.0 1.5 0.5 0.1
V V mA mA
固电
导体 半
INCH
E SEM ANG
OND IC
TOR UC
250
2
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
3DD207
固电
导体 半
INCH
E SEM ANG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:¡À
0.1mm)
3
