Silicon NPN Power Transistors

www.DataSheet4U.com Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD207 DESCRIPTION ¡¤ With TO-3 package ¡¤ Low collector saturation voltage APPLICATIONS ¡¤ For audio amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=¡æ ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg 电半 固 PARAMETER Collector-base voltage 导体 INCH Collector-emitter voltage Emitter-base voltage E SEM ANG Open base TC=75¡æ Open emitter OND IC CONDITIONS TOR UC VALUE 60 60 6 5 50 150 -55~150 UNIT V V V A W ¡æ ¡æ Open collector Collector current Collector power dissipation Junction temperature Storage temperature www.DataSheet4U.com Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=60V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=5V 40 MIN 60 60 6 TYP. 3DD207 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE MAX UNIT V V V 1.0 1.5 0.5 0.1 V V mA mA 固电 导体 半 INCH E SEM ANG OND IC TOR UC 250 2 www.DataSheet4U.com Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 3DD207 固电 导体 半 INCH E SEM ANG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:¡À 0.1mm) 3