Single High-Side Switch

Freescale Semiconductor Advance Information Document Number: MC33981 Rev. 6.0, 5/2007 Single High-Side Switch (4.0 mΩ), PWM clock up to 60kHz The 33981 is a high-frequency, self-protected 4.0 mΩ RDS(ON) highside switch used to replace electromechanical relays, fuses, and discrete devices in power management applications. The 33981 can be controlled by Pulse-Width Modulation (PWM) with a frequency up to 60 kHz. It is designed for harsh environments, and it includes self-recovery features. The 33981 is suitable for loads with high in-rush current, as well as motors and all types of resistive and inductive loads. The 33981 is packaged in a 12 x 12 non-leaded power-enhanced Power QFN package with exposed tabs. Features • Single 4.0 mΩ RDS(ON) Maximum High-Side Switch • PWM Capability up to 60 kHz with Duty Cycle from 5% to 100% • Very Low Standby Current • Slew Rate Control with External Capacitor • Overcurrent and Overtemperature Protection, Undervoltage Shutdown and Fault Reporting • Reverse Battery Protection • Gate Drive Signal for External Low-Side N-Channel MOSFET with Protection Features • Output Current Monitoring • Temperature Feedback • Pb-Free Packaging Designated by Suffix Code PNA www.DataSheet4U.com 33981B HIGH-SIDE SWITCH SCALE 1:1 PNA (Pb-Free Suffix) 98ARL10521D 16-PIN PQFN (12 X 12) Bottom View ORDERING INFORMATION Device MC33981BPNA/R2 Temperature Range (TA) - 40°C to 125°C Package 16 PQFN VDD VDD VPWR 33981 CONF I/O I/O VPWR CBOOT OUT DLS FS INLS EN INHS TEMP CSNS MCU I/O I/O A/D A/D M GLS OCLS SR GND Figure 1. 33981 Simplified Application Diagram * This document contains certain information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2007. All rights reserved. INTERNAL BLOCK DIAGRAM INTERNAL BLOCK DIAGRAM VPWR Undervoltage Detection TEMP Temperature Feedback Bootstrap Supply CBOOT SR FS EN INHS INLS Logic Current Protection Gate Driver Slew Rate Control OUT OUT Current Recopy Overtemperature Detection 5.0 V RDWN ICONF IDWN CrossConduction 5.0 V Low-Side Gate Driver and Protection GLS DLS CONF IOCLS GND CSNS OCLS Figure 2. 33981 Simplified Internal Block Diagram 33981 2 Analog Integrated Circuit Device Data Freescale Semiconductor PIN CONNECTIONS PIN CONNECTIONS Package Transparent Top View CSNS TEMP EN INHS FS INLS CONF OCLS DLS GLS SR CBOOT 4 5 6 7 8 9 Table 1. PIN DEFINITIONS Descriptions of the pins listed in the table below can be found in the Functional Description section located on page 12. Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15, 16 Pin Name CSNS TEMP EN INHS FS INLS CONF OCLS DLS GLS SR CBOOT GND VPWR OUT Pin Function Reports Reports Input Input Reports Input Input Input Input Output Input Input Ground Input Output Formal Name Output Current Monitoring Temperature Feedback Enable (Active High) Serial Input High Side Fault Status (Active Low) Serial Input Low Side Configuration Input Low-Side Overload Drain Low Side Low-Side Gate Slew Rate Control Bootstrap Capacitor Ground Positive Power Supply Output Definition This pin is used to generate a ground-referenced voltage for the microcontroller (MCU) to monitor output current. This pin is used by the MCU to monitor board temperature. This pin is used to place the device in a low-current sleep mode. This input pin is used to control the output of the device. This pin monitors fault conditions and is active LOW. This pin is used to control an external low-side N-channel MOSFET. This input manages MOSFET N-channel cross-conduction. This pin sets the VDS protection level of the external low-side MOSFET. This pin is the drain of the external low-side N-channel MOSFET. This output pin drives the gate of the external low-side N-channel MOSFET. This pin controls the output slew rate. This pin provides the high-pulse current to drive the device. This is the ground pin of the device. This pin is the source input of operational power for the device. These pins provide a protected high-side power output to the load connected to the device. 10 11 12 GND 13 VPWR 14 15 OUT 16 OUT Figure 3. Pin Connections 2 3 1 33981 Analog Integrated Circuit Device Data Freescale Semiconductor 3 ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 2. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Rating ELECTRICAL RATINGS Power Supply Voltage Steady-State Input/Output Pins Voltage (1) INHS, INLS, CONF, CSNS, FS, TEMP, EN VOUT 41.0 -5.0 (2) Symbol Value Unit VPWR -16 to 41 - 0.3 to 7.0 V V Output Voltage Positive Negative Continuous Output Current CSNS Input Clamp Current EN Input Clamp Current SR Voltage CBOOT Voltage OCLS Voltage Low-Side Gate Voltage Low-Side Drain Voltage ESD Voltage (3) V IOUT ICL(CSNS) ICL(EN) VSR CBOOT VOCLS VGLS VDLS VESD 40.0 15.0 2.5 - 0.3 to 54.0 - 0.3 to 54.0 - 5.0 to 7.0 - 0.3 to 15.0 - 5.0 to 41.0 ± 2000 ± 750 ± 500 A mA mA V V V V V V Human Body Model (HBM) Charge Device Model (CDM) Corner Pins (1, 12, 15, 16) All Other Pins (2-11, 13-14) THERMAL RATINGS Operating Temperature Ambient Junction Storage Temperature Thermal Resistance (4) °C TA TJ - 40 to 125 - 40 to 150 - 55 to 150 1.0 20.0 245 °C TSTG RθJC RθJA (5) °C °C/W Junction to Power Die Case Junction to Ambient Peak Pin Reflow Temperature During Solder Mounting TSOLDER Notes 1. Exceeding voltage limits on INHS, INLS, CONF, CSNS, FS, TEMP, and EN pins may cause a malfunction or permanent damage to the device. 2. Continuous high-side output rating as long as maximum junction temperature is not exceeded. Calculation of maximum output current using package thermal resistance is required. 3. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 Ω) and the Charge Device Model (CDM), Robotic (CZAP = 4.0 pF). 4. 5. Device mounted on a 2s2p test board per JEDEC JESD51-2. pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. 33981 4 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic POWER INPUT (VPWR) Battery Supply Voltage Range Fully Operational Extended (6) VPWR Supply Current INHS = 1 and OUT Open INLS = 0 VPWR Supply Current INHS = INLS = 0, EN = 5.0 V, OUT Connected to GND Sleep State Supply Current (VPWR < 14 V, EN = 0 V, OUT Connected to GND) TA = 25°C TA = 125°C Undervoltage Shutdown Undervoltage Hysteresis POWER OUTPUT (IOUT, VPWR) Output Drain-to-Source ON Resistance (IOUT = 20 A, TA = 25°C) VPWR = 6.0 V VPWR = 9.0 V VPWR = 13.0 V Output Drain-to-Source ON Resistance (IOUT = 20 A, TA = 150°C) VPWR = 6.0 V VPWR = 9.0 V VPWR = 13.0 V Output Source-to-Drain ON Resistance (IOUT = -20 A, TA = 25°C)(7) VPWR = - 12 V Output Overcurrent Detection Level 9.0 V < VPWR < 16 V Current Sense Ratio 9.0 V < VPWR < 16 V, CSNS < 4.5 V Current Sense Ratio (CSR) Accuracy 9.0 V < VPWR < 16 V, CSNS < 4.5 V Output Current 5.0 A 15 A, 20 A and 30 A Current Sense Voltage Clamp I CSNS = 15 mA VCL(CSNS) 4.5 6.0 7.0 -20 -15 – – 20 15 V CSR_ACC CSR – 1/20000 – % I OCH 75 100 125 – RSD(ON) – – 8.0 A RDS(ON)150 – – – – – – 10.2 8.5 6.8 mΩ RDS(ON)25 – – – – – – 6.0 5.0 4.0 mΩ mΩ VPWR(UV) VPWR(UVHYS) – – 2.0 0.05 – – 4.0 0.15 5.0 50.0 4.5 0.3 V V IPWR(SLEEP) IPWR(SBY) – 10.0 12.0 µA mA IPWR(ON) – 10.0 12.0 VPWR 6.0 4.5 – – 27.0 27.0 mA V Symbol Min Typ Max Unit Notes 6. OUT can be commanded fully on, PWM is available at room. Low Side Gate driver is available. Protections and Diagnosis are not available. Min/max parameters are not guaranteed. 7. Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VPWR. 33981 Analog Integrated Circuit Device Data Freescale Semiconductor 5 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic POWER OUTPUT (VPWR) (continued) Overtemperature Shutdown Overtemperature Shutdown Hysteresis (8) Symbol Min Typ Max Unit TSD TSDHYS 160 5.0 175 – 190 20 °C °C V LOW SIDE GATE DRIVER (VPWR, VGLS, VOCLS) Low-Side Gate Voltage VPWR = 6.0 V VPWR = 9.0 V VPWR = 13 V VPWR = 27 V Low-Side Gate Sinked Current VGLS = 2 V, VPWR = 13 V Low-Side Gate Sourced Current VGLS = 2 V, VPWR = 13 V Low-Side Overload Detection Level versus Low-Side Drain Voltage VOCLS - VDLS, (VOCLS ≤ 4.0 ς) CONTROL INTERFACE (CONF, INHS, INLS, EN, OCLS) Input Logic High Voltage (CONF, INHS, INLS) Input Logic Low Voltage (CONF, INHS, INLS) Input Logic Voltage Hysteresis (CONF, INHS, INLS) Input Logic Active Pulldown Current (INHS, INLS) Enable Pull-down Resistor (EN) Enable Voltage Threshold (EN) Input Clamp Voltage (EN) IEN < 2.5 mA Input Forward Voltage (EN) Input Active Pullup Current (OCLS) Input Active Pullup Current (CONF) FS Tri-State Capacitance (8) FS Low-State Output Voltage IFS = -1.6 mA Temperature Feedback TA = 25°C for VPWR = 14 V Temperature Feedback Derating (8) DTFEED VTFEED VGLS 5.0 8.0 12.0 12.0 I GLSNEG – I GLSPOS – VDS_LS -50 – +50 100 – 100 – 5.4 8.4 12.4 12.4 6.0 9.0 13.0 13.0 mA mA mV VIH VIL VINHYS IDWN RDWN VEN VCLEN