N-Channel Silicon MOSFET General-Purpose Switching Device

www.DataSheet4U.com Ordering number : ENN8056 2SK3818 2SK3818 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 74 296 1.65 75 150 --55 to +150 410 74 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=100µH, IAV=74A *2 L≤100µH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=37A ID=37A, VGS=10V ID=37A, VGS=4V Ratings min 60 1 ±10 1.2 27 45 10 13 13 18 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K3818 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404QA TS IM TB-00000613 No.8056-1/4 2SK3818 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A IS=74A, VGS=0 Ratings min typ 5250 780 525 38 315 370 310 100 18 16 1.13 1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 2093A 0.9 Package Dimensions unit : mm 2090A 4.5 1.3 10.2 4.5 10.2 0.8 1.3 11.5 8.8 9.9 1.5max 8.8 1.6 20.9 1.2 3.0 11.0 9.4 0.8 0.4 1 2 3 2.7 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.55 2.55 2.55 2.55 Switching Time Test Circuit VDD=30V VIN 10V 0V VIN ID=37A RL=0.81Ω Unclamped Inductive Test Circuit ≥50Ω RG 2.7 1.4 L DUT D PW=10µs D.C.≤1% VOUT G 15V 0V 50Ω VDD 2SK3818 P.G 50Ω S No.8056-2/4 2SK3818 90 80 ID -- VDS Tc=25°C 10 V 90 ID -- VGS 5°C 80 25° C =7 5° C 1.0 1.5 2.0 2.5 3.0 VDS=10V 70 Drain Current, ID -- A 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain Current, ID -- A 60 50 40 30 20 10 0 0 0.5 Tc VGS=3V 25 °C --25 °C 3.5 4.0 Tc= --2 8V 70 4V 75° C 4.5 IT07835 150 IT07837 1.4 IT07839 30 IT07841 Drain-to-Source Voltage, VDS -- V 30 6V IT07834 30 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS ID=37A RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 20 20 15 Tc=75°C 15 I D= , VG 37A 4V S= 10 25°C --25°C 10 , 37A I D= =10V VGS 5 5 0 2 3 4 5 6 7 8 9 10 IT07836 0 --50 --25 0 25 50 75 100 125 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Case Temperature, Tc -- °C 100 7 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 VDS=10V Forward Current, IF -- A 3 2 10 7 5 3 2 1.0 7 5 0.1 25 °C = Tc 5°C --2 10 7 5 3 2 1.0 7 5 3 2 75 °C Tc=7 5°C 0.1 7 5 3 2 0.01 0.2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT07838 0.4 0.6 --25°C 0.8 25°C 1.0 1.2 SW Time -- ID td(off) 10000 7 5 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=30V VGS=10V Switching Time, SW Time -- ns 5 3 2 Ciss Ciss, Coss, Crss -- pF tf 3 2 100 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT07840 tr 1000 7 5 3 0 5 10 Coss Crss td(on) 15 20 25 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No.8056-3/4 2SK3818 10 9 VGS -- Qg VDS=30V ID=74A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=296A 10 10 ID=74A µs 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 0µ s Operation in this area is limited by RDS(on). 1m 10 s ms 1 DC 00m s op era tio n 0.1 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.0 IT07842 90 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 5 7 100 IT07843 PD -- Tc Allowable Power Dissipation, PD -- W 1.65 1.5 80 75 70 60 50 40 30 20 10 0 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Amibient Tamperature, Ta -- °C IT07811 Case Tamperature, Tc -- °C IT07844 Note on usage : Since the 2SK3818 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8056-4/4