N-CHANNEL SILICON POWER MOSFET

www.DataSheet4U.com 2SK3535-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR *2 EAS *1 dV DS /dt dV/dt *3 PD Tch Tstg Ratings 250 220 ±37 ±3.4 *4 ±148 ±30 37 251.9 20 5 2.4 *4 270 +150 -55 to +150 Unit V V A A A V A mJ kV/µs kV/µs W W °C °C <150°C *3 *2 Tch = Remarks VGS=30V Ta=25°C Equivalent circuit schematic (4) Drain(D) (1) Gate(G) VDS <250V = Ta=25°C (2) Source(S) [signal line] (3) Source(S) [power line] IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph = = = *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) Electrical characteristics atTc =25°C ( unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS =250V VDS =200V VGS=±30V ID=12.5A VGS=0V VGS=0V VDS=0V VGS=10V Tch=25°C Tch=125°C 10 75 16 2000 220 15 20 30 60 20 44 14 16 1.10 0.45 1.5 Min. 250 3.0 Typ. Max. 5.0 25 250 100 100 3000 330 30 30 45 90 30 66 21 24 1.65 Units V V µA nA mΩ S pF ID=12.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=72V ID=12.5A VGS=10V RGS=10 Ω V CC =72V ID=25A VGS=10V L=309 µH Tch=25°C IF=25A VGS=0V Tch=25°C IF=25A VGS=0V -di/dt=100A/µs Tch=25°C 8 ns nC 37 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 0.463 87.0 52.0 Units °C/W °C/W °C/W *4 1 2SK3535-01 Characteristics Allowable Power Dissipation PD=f(Tc) 5 300 FUJI POWER MOSFET Allowable Power Dissipation PD=f(Tc) 4 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 250 200 3 PD [W] PD [W] 150 2 100 1 50 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [ ° C] Tc [°C] Typical Output Characteristics 100 Typical Transfer Characteristic ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 20V 80 10V 8V 7.5V 60 100 ID [A] 7.0V 40 6.5V ID[A] 12 10 1 20 6.0V VGS=5.5V 0.1 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 Typical Drain-Source on-state Resistance 0.25 RDS(on)=f(ID):80µs Pulse test, Tch=25°C VGS= 6.0V 5.5V 0.20 6.5V 7.0V 7.5V 10 RDS(on) [ Ω ] 0.15 8V 10V 20V gfs [S] 0.10 1 0.05 0.1 0.1 1 10 100 0.00 0 20 40 60 80 100 ID [A] ID [A] 2 2SK3535-01 FUJI POWER MOSFET 270 240 210 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.5A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 7.0 6.5 6.0 5.5 5.0 max. RDS(on) [ m Ω ] 180 150 max. 120 90 60 30 0 -50 -25 0 25 50 75 100 125 150 typ. VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [°C] Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=25A, Tch=25°C 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 14 12 Vcc= 36V 72V Ciss 10 10 0 VGS [V] 8 C [nF] 96V Coss 6 10 -1 4 2 -2 Crss 10 0 0 10 20 30 40 50 60 10 -1 10 0 10 1 10 2 Qg [C] VDS [V] Typical Forward Characteristics of Reverse Diode 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V, VGS=10V, RG=10Ω 10 3 IF=f(VSD):80µs Pulse test,Tch=25°C tf 10 10 2 td(off) IF [A] t [ns] tr td(on) 1 10 1 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3535-01 FUJI POWER MOSFET 700 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V IAS=15A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 30 600 25 500 IAS=22A 20 EAS [mJ] 400 IAV [A] 50 75 100 125 150 15 300 IAS=37A 200 10 100 5 0 0 25 0 0 25 50 75 100 125 150 starting Tch [°C] starting Tch [ C] ° 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V 100 90 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Single Pulse Avalanche Current I AV [A] 10 1 Rth(ch-a) [°C/W] 10 -7 80 70 60 50 40 30 10 0 10 -1 20 10 10 -8 10 -2 -6 -5 -4 -3 -2 0 0 1000 2000 3000 2 10 10 10 10 10 4000 5000 tAV [sec] Drain Pad Area [mm ] http://www.fujielectric.co.jp/denshi/scd/ 4