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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating : ±30 V • Avalanche capability ratings ORDERING INFORMATION
PART NUMBER 2SK3113B-S15-AY
Note Note Note Note
LEAD PLATING
PACKING Tube 70 p/tube
PACKAGE TO-251 (MP-3-a) typ. 0.39 g TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g
2SK3113B(1)-S27-AY 2SK3113B-ZK-E1-AY 2SK3113B-ZK-E2-AY
Pure Sn (Tin)
Tube 75 p/tube Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
(TO-251)
600
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
V V A A W W °C °C A mJ (TO-252)
±30 ±2.0 ±8.0 20 1.0 150 –55 to +150 2.0 2.7
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
PT2 Tch Tstg IAS EAS
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18061EJ3V0DS00 (3rd edition) Date Published June 2007 NS Printed in Japan
2006
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2SK3113B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 1.0 A VGS = 10 V RG = 10 Ω RL = 10 Ω VDD = 450 V VGS = 10 V ID = 2.0 A IF = 2.0 A, VGS = 0 V IF = 2.0 A, VGS = 0 V di/dt = 50 A/μs
MIN.
TYP.
MAX. 100 ±10
UNIT
μA μA
V S
2.5 0.5 0.9 3.2 290 75 7 10.5 4.8 15.8 10.5 7.9 2.7 3.2 0.8 190 500
3.5
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
4.4
Ω pF pF pF ns ns ns ns nC nC nC V ns nC
VF(S-D) trr Qrr
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS VGS 0 τ Starting Tch τ = 1 μs Duty Cycle ≤ 1% ID
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS
Wave Form
50 Ω
RG
0
10%
VGS
90%
VDD ID
90% 90%
IAS ID VDD
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 Ω RL VDD
PG.
2
Data Sheet D18061EJ3V0DS
2SK3113B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
100
40
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W
35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C
80
60
40
20
0 0
20
40 60 80 100 120 140 160 Tch - Channel Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
Tc = 25°C, Single pulse ID(pulse) PW = 10 μs
100 μs
ID - Drain Current - A
10
ID(DC)
1 ms
1
RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited
10 ms
0.1
0.01 1 10 100 1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
Rth(ch-A) = 125°C/W 100 Rth(ch-C) = 6.25°C/W
10
1
0.1 Single pulse 0.01
100 μ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width – s
Data Sheet D18061EJ3V0DS
3
2SK3113B
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
5 4.5 Pulsed VGS = 10 V 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 8V
FORWARD TRANSFER CHARACTERISTICS
100
ID - Drain Current - A
ID - Drain Current - A
10
1
Tch = 125°C 75°C 25°C −25°C VDS = 10 V Pulsed 20 25 30
0.1
0.01 0 5 10 15
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
5
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
10 VDS = 10 V Pulsed 1 Tch = − 25°C 25°C
VGS(off) - Gate Cut-off Voltage - V
4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 VDS = 10 V ID = 1 mA
125°C 0.1 75°C
0.01 0.01
0.1
1
10
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0.01 0.1 1 10 20 V Pulsed VGS = 10 V
8.0 7.0 6.0 5.0 4.0 3.0 2.0 0 5 10 15
ID = 2.0 A 1.0 A 20 25
VGS – Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D18061EJ3V0DS
2SK3113B
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - Ω
10 8 ID = 2.0 A 6 1.0 A 4 2 0 -50 0 50 100 150
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
IF – Diode Forward Current - A
10
1 V GS = 10 V 0.1 0V Pulsed 0.01 0.0 0.5 1.0
VGS = 10 V Pulsed
Tch - Channel Temperature - °C
VF(S-D) – Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
1000
SWITCHING CHARACTERISTICS
Ciss, Coss, Crss - Capacitance - pF
C iss
100
td(on), tr, td(off), tf - Switching Time - ns
VDD = 150 V VGS = 10 V RG = 10 Ω tf
C oss
100
td(off) 10 td(on) tr 1 0.1 1 10
10 C rss VGS = 0 V f = 1 MHz 1 0.1 1 10 100
VDS - Drain to Source Voltage – V ID - Drain Current - A
REVWESE RECOVERY TIME vs. DRAIN CURRENT
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600 10 8 VGS 7 6 300 200 100 ID = 2.0 A 0 0 2 4 6 8 10 VDS 5 4 3 2 1 0
VDS – Drain to Source Voltage - V
trr – Reverse Recovery Time - ns
500 400
100
10 0.1 1 10
ID - Drain Current - A
QG – Gate Chage - nC
Data Sheet D18061EJ3V0DS
5
VGS – Gate to Source Voltage - V
di/dt = 50 A/μs VGS = 0 V
VDD = 450 V 300 V 150 V
9
2SK3113B
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
SINGLE AVALANCHE ENERGY DERATING FACTOR
120
IAS - Single Avalanche Current - A
Energy Derating Factor - %
100 80 60 40 20
VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 2.0 A
10 IAS = 2.0 A 1.0 RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C 0.1 10 μ
EAS = 2.7 mJ
100 μ 1m L - Inductive Load - H
10 m
0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D18061EJ3V0DS
2SK3113B
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a)
Mold Area
2) TO-251 (MP-3-b)
0.7 TYP.
2.3 ±0.1 0.5 ±0.1
1.06 TYP.
6.6 ±0.2 5.3 TYP. 4.3 MIN.
6.6±0.2 5.3 TYP.
2.3±0.1 0.5±0.1
4
4.0 MIN. 6.1 ±0.2
4
6.1±0.2
1
9.3 TYP.
No Plating
1
2
3
1.8 ±0.2
2
3
11.25 TYP.
16.1 TYP.
1.14 MAX.
1.14 MAX.
0.76±0.12
0.76 ±0.1 2.3 TYP. 2.3 TYP. 0.5 ±0.1
1.1±0.13
0.5±0.1 2.3 TYP.
2.3 TYP.
1.04 TYP.
1.02 TYP.
1. Gate 2. Drain 3. Source 4. Fin (Drain)
1.Gate 2.Drain 3.Source 4.Fin (Drain)
3) TO-252 (MP-3ZK)
1.0 TYP.
EQUIVALENT CIRCUIT
2.3±0.1 0.5±0.1 No Plating
6.5±0.2 5.1 TYP. 4.3 MIN. 4
Drain
Gate
6.1±0.2 10.4 MAX. (9.8 TYP.)
Body Diode
4.0 MIN.
1
0.8
2
3
No Plating 0 to 0.25 0.5±0.1 1.0
1.14 MAX. 2.3 2.3
0.76±0.12
1. Gate 2. Drain 3. Source 4. Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.51 MIN.
Gate Protection Diode
Source
4.13 TYP.
Data Sheet D18061EJ3V0DS
7
2SK3113B
• The information in this document is current as of June, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and informati
