Ultrahigh-Speed Switching Applications

Ordering number : ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ628] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --12 ±8 --2.5 Unit V V A A W W °C °C Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C --10 1.0 3.5 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0 VDS=--12V, VGS=0 VGS=±6.4V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=-1.3A ID=-1.3A, VGS=--4.5V ID=-0.7A, VGS=--2.5V ID=-0.2A, VGS=--1.8V Ratings min --12 --10 ±10 --0.3 2.1 3.0 120 170 230 155 240 360 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : MB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72502 TS IM TA-100054 No.7271-1/4 2SJ628 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=-2.5A VDS=--6V, VGS=--4.5V, ID=-2.5A VDS=--6V, VGS=--4.5V, ID=-2.5A IS=--2.5A, VGS=0 Ratings min typ 310 90 80 15 70 50 52 4.6 0.7 1.3 --0.93 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --4.5V VIN ID= --1.3A RL=4.62Ω VDD= --6V D PW=10µs D.C.≤1% VOUT G 2SJ628 P.G 50Ω S --2.0 ID -- VDS 0V 5V --3 . --2.0 --1.8 --1.6 ID -- VGS VDS= --6V --1.6 Drain Current, ID -- A 5V --3 . --2 --1.8 .5 V --4 . --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 Drain Current, ID -- A 8 --1. V --1.4 --1.2 --1.0 --0.8 V --1.5 --0.4 Ta= 7 --0.2 0 0 --0.5 --1.0 --25 --1.5 VGS= --1.0V --0.2 --0.3 --0.4 --0.5 IT04769 °C 25° C --0.6 5°C --2.0 IT04770 Drain-to-Source Voltage, VDS -- V 400 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 400 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 300 ID= --0.7A 200 --1.3A 200 I D= 100 100 --2.5V S= .7A, V G 0 I D= -= --4.5V .3A, V GS I D= --1 = --1 , VGS --0.2A .8V 0 0 --1 --2 --3 --4 --5 --6 --7 --8 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT04771 Ambient Temperature, Ta -- °C IT04772 No.7271-2/4 2SJ628 10 yfs -- ID VDS= --6V 7 5 3 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 Forward Current, IF -- A 5 2 3 2 Ta= °C --25 75° C --1.0 7 5 °C Ta= 75 C 25° 1.0 7 5 --0.1 25°C 3 2 2 3 5 7 --1.0 2 3 5 IT04773 --0.1 --0.4 --0.6 --0.8 --25° C --1.0 --1.2 IT04774 Drain Current, ID -- A 3 2 SW Time -- ID VDD= --6V VGS= --4.5V Ciss, Coss, Crss -- pF 7 5 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 100 7 5 3 3 2 Ciss td(off) tf tr 2 100 7 5 Coss td(on) 10 7 5 --0.1 Crss 3 2 3 5 7 --1.0 2 3 5 IT04775 2 --10 7 5 0 --2 --4 --6 --8 --10 --12 IT04776 Drain Current, ID -- A --4.5 --4.0 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --6V ID= --2.5A Drain Current, ID -- A IDP= --10A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --2.5A DC 100 ms ope rat ion <10µs 1m s 10 ms Operation in this area is limited by RDS(on). --0.01 --0.1 Tc=25°C Single pulse Mounted on a ceramic board(250mm2!0.8mm) 2 3 5 7 --1.0 2 3 5 Total Gate Charge, Qg -- nC 1.2 IT04777 4.0 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 7 --10 2 IT04778 PD -- Tc Allowable Power Dissipation, PD -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.0 M 0.8 ou nt ed on ac er 0.6 am ic bo ar d( 0.4 25 0m m2 ! 0.2 0.8 m m ) 160 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT04779 Case Temperature, Tc -- °C IT04780 No.7271-3/4 2SJ628 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.7271-4/4