Silicon P-Channel MOS FET

www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 2 3 3 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings –20 ±20 –10 –40 –10 20 150 –55 to +150 Unit V V A A A W °C °C 2 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr –20 ±20 — — –1.0 — — 6 — — — — — — — — — Typ — — — — — 0.05 0.09 9 730 680 260 13 110 90 110 –1.2 50 Max — — ±10 –100 –2.5 0.08 0.14 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V µs IF = –10 A, VGS = 0 IF = –10 A, VGS = 0, diF/dt = 50 A/µs ID = –5 A, VGS = –10 V, RL = 2 Ω Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –16 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –5 A, VGS = –10 V* ID = –5 A, VGS = –4 V* VDS = –10 V, VGS = 0, f = 1 MHz 1 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test ID = –5 A, VDS = –10 V* 1 3 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Power vs. Temperature Derating 20 Pch (W) Channel Dissipation 15 10 5 0 50 100 150 Tc (°C) 200 Case Temperature Maximum Safe Operation Area –100 10 µs I D (A) –30 1 m 100 µs –10 O A pe by rea rat R is ion D Lim in S( on ite Th d is ) s Drain Current –3 –1 –0.3 D (T .C c Op = 25 era °C tio ) n Ta = 25 °C PW = 10 ms (1shot) –0.1 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) Typical Output Characteristics –20 –10 V –6 V –4 V Pulse Test –3.5 V Drain Current I D (A) –16 –12 –3 V –8 VGS = –2.5 V –4 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) 4 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Typical Tranfer Characteristics –20 V DS = –10 V Pulse Test ID Drain Current (A) –16 –12 –8 75 °C Tc = 25 °C –25 °C –4 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) –1.0 Pulse Test –0.8 I D = –10 A Drain to Source Voltage –0.6 –0.4 –5 A –2 A –0.2 0 –2 –4 –6 Gate to Source Voltage –8 –10 V GS (V) Drain to Source On State Resistance R DS(on) ( Ω ) Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 VGS = –4 V –10 V Pulse Test 0.05 0.02 0.01 –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) –50 5 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Static Drain to Source on State Resistance R DS(on) ( Ω) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 I D = –10 A –5 A V GS = –4 V –10 A –5 A –2 A 0.12 –2 A 0.08 0.04 V GS = –10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) 50 20 –25 °C 10 5 Tc = 25 °C 75 °C 2 1 0.5 –0.2 V DS = –10 V Pulse Test –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) Body–Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 di / dt = 20 A / µs VGS = 0, Pulse Test 20 10 5 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Reverse Drain Current I DR (A) 6 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Typical Capacitance vs. Drain to Source Voltage 10000 Capacitance C (pF) 1000 Ciss Coss Crss 100 VGS = 0 f = 1 MHz 10 0 –4 –8 –12 –16 –20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V DD = –5 V –10 V –20 V V DS V GS (V) Gate to Source Voltage 0 0 –10 –4 Drain to Source Voltage –20 V DD = –5 V –10 V –20 V V GS –8 –30 –12 –40 I D = –10 A –50 0 –8 –16 –24 –32 Gate Charge Qg (nc) Switching Characteristics 500 200 100 50 20 10 5 –0.1 –0.2 –0.5 –1 –2 –5 Drain Current I D (A) tf –16 –20 –40 V GS = –10 V, V DD = –10 V PW = 2 µs, duty < 1 % Switching Time t (ns) t d(off) tr t d(on) –10 7 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –12 –10 V –8 –5 V –4 V GS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –20 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.2 0.1 0.3 0.1 0.05 0.02 0.0 1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C uls e PDM PW T 0.03 1 o sh tP D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) Waveforms 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% 90% Vin -10 V 50Ω V . DD V = 10 . Vout td(on) 90% 10% tr td(off) 90% 10% tf 8 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 9