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2SD288
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
*
TO-220
ABSOLUTE MAXIMUM RATINGS (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 80 55 5 3 20 150 -50~150
Unit V V V A W C
C
o
o
ELECTRICAL CHARACTERISTICS (TA=25oC)
Characteristic Collector Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO hFE1 VCE(sat) Test Condition VCB= 50V , IE=0 VCE= 5V , IC=0.5A IC=1A , IB=0.1A 40 Min Typ Max 50 240 1.0 Unit
µA
V
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