Silicon NPN Power Transistors

www.DataSheet4U.com Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1413 DESCRIPTION ¡¤ With TO-220Fa package ¡¤ High DC current gain ¡¤ Low saturation voltage ¡¤ Complement to type 2SB1023 APPLICATIONS ¡¤ Power amplifier and switching applications ¡¤ Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 60 40 5 3 0.5 20 150 -55~150 ¡æ ¡æ UNIT V V V A A W JMnic www.DataSheet4U.com Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1413 CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A ;IB=4mA IC=2A ;IB=4mA VCB=60V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 40 1.5 2.0 20 2.5 ¦Ì TYP. MAX UNIT V V V A mA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=30V ,RL=10¦¸ 0.1 1.0 0.2 ¦Ì ¦Ì ¦Ì s s s JMnic www.DataSheet4U.com Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1413 Fig.2 Outline dimensions (unindicated tolerance:¡À 0.15 mm) JMnic