NPN SILICON RF TRANSISTOR

www.DataSheet4U.com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt • UHS0 technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • 3-pin lead-less minimold package (1005 PKG) ORDERING INFORMATION Part Number 2SC5787 2SC5787-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) ° Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 9.0 3.0 1.5 35 105 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10070EJ01V0DS (1st edition) (Previous No. P15786EJ1V0DS00) Date Published January 2002 CP(K) Printed in Japan The mark • shows major revised points. © NEC Corporation 2001 © NEC Compound Semiconductor Devices 2002 2SC5787 ELECTRICAL CHARACTERISTICS (TA = +25°C) ° Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance fT S21e NF Cre Note 2 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 1 V, IC = 5 mA – – 50 – – – 100 100 100 nA nA – VCE = 1 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCB = 0.5 V, IE = 0 mA, f = 1 MHz 17 11 – – 20 13 1.4 0.22 – – 2.5 0.30 GHz dB dB pF Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank Marking hFE Value FB B7 50 to 100 2 Data Sheet PU10070EJ01V0DS 2SC5787 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) ° TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 150 125 105 0.5 f = 1 MHz 0.4 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 100 75 50 25 0.3 0.2 0.1 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 0.001 VCE = 1 V Collector Current IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 0.001 VCE = 2 V Collector Current IC (mA) 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 500 µ A 450 µ A Collector Current IC (mA) 400 µ A 350 µ A 300 µ A 250 µ A 30 20 200 µ A 150 µ A 10 100 µ A IB = 50 µ A 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Data Sheet PU10070EJ01V0DS 3 2SC5787 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 1 V 1 000 VCE = 2 V DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain hFE 100 DC Current Gain hFE 1 10 100 100 10 0.1 10 0.1 1 10 100 Collector Current IC (mA) Collector Current IC (mA) 4 Data Sheet PU10070EJ01V0DS 2SC5787 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 28 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 28 Gain Bandwidth Product fT (GHz) 24 20 16 12 8 4 0 1 Gain Bandwidth Product fT (GHz) VCE = 1 V f = 2 GHz 24 20 16 12 8 4 0 1 VCE = 2 V f = 2 GHz 10 Collector Current IC (mA) 100 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 30 25 20 15 10 5 0 0.1 1 Frequency f (GHz) 10 |S21e| 2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 30 25 20 15 10 5 0 0.1 1 Frequency f (GHz) 10 |S21e|2 MSG MAG VCE = 2 V IC = 20 mA VCE = 1 V IC = 20 mA MSG MAG Data Sheet PU10070EJ01V0DS 5 2SC5787 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 24 MSG 20 |S21e|2 MAG 24 MSG 20 |S21e|2 MAG 16 16 12 12 8 VCE = 1 V f = 1 GHz 4 1 10 Collector Current IC (mA) 100 8 VCE = 2 V f = 1 GHz 4 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 1 V f = 2 GHz 16 MSG 12 MAG |S21e|2 20 16 MSG VCE = 2 V f = 2 GHz MAG |S21e|2 12 8 8 4 0 4 0 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 1 V f = 4 GHz 16 20 VCE = 2 V f = 4 GHz 16 12 MSG 8 |S21e| 4 0 2 12 MAG MSG MAG 8 |S21e|2 4 0 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 6 Data Sheet PU10070EJ01V0DS 2SC5787 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Ga Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 5 Ga Associated Gain Ga (dB) 20 4 16 4 16 3 12 3 12 2 NF VCE = 1 V f = 1 GHz 0 1 10 Collector Current IC (mA) 8 2 NF VCE = 2 V f = 1 GHz 0 1 10 Collector Current IC (mA) 8 1 4 1 4 0 100 0 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Ga 20 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 Ga Associated Gain Ga (dB) 3 12 3 12 2 NF VCE = 1 V f = 1.5 GHz 0 1 10 Collector Current IC (mA) 8 2 NF 1 VCE = 2 V f = 1.5 GHz 0 1 10 Collector Current IC (mA) 8 1 4 4 0 100 0 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 20 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 Associated Gain Ga (dB) Ga 3 12 Ga 3 12 2 NF VCE = 1 V f = 2 GHz 0 1 10 Collector Current IC (mA) 8 2 NF 1 VCE = 2 V f = 2 GHz 0 1 10 Collector Current IC (mA) 8 1 4 4 0 100 0 100 Remark The graphs indicate nominal characteristics. Data Sheet PU10070EJ01V0DS 7 Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) 4 16 4 16 Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) 4 16 4 16 2SC5787 S-PARAMETERS VCE = 1 V, IC = 1 mA, ZO = 50 Ω Frequency (GHz) MAG. S11 ANG. (deg.) −5.9 −13.1 −20.0 −26.4 −33.1 −39.3 −45.9 −52.3 −58.5 −64.6 −70.7 −76.8 −82.9 −88.3 −94.1 −99.6 −105.1 −110.3 −115.4 −120.4 −124.9 −129.8 −134.0 −138.5 −142.7 −146.9 −151.1 −155.0 −159.3 −162.9 162.3 139.0 MAG. S21 ANG. (deg.) 176.3 167.7 162.0 156.1 149.9 144.7 139.3 133.9 128.6 123.6 118.9 114.3 109.8 105.6 101.4 97.5 94.1 90.6 87.5 84.2 81.5 78.3 75.5 72.6 69.8 67.4 64.8 62.5 60.3 57.6 37.5 22.2 MAG. S12 ANG. (deg.) 90.4 81.4 76.6 72.3 67.8 63.9 59.9 56.6 53.2 50.3 47.4 45.1 43.0 41.2 39.6 38.6 38.1 38.0 38.5 39.4 40.7 42.6 45.2 48.2 51.7 55.8 59.6 63.9 67.7 71.6 83.5 71.1 MAG. S22 ANG. (deg.) −3.6 −7.0 −10.5 −14.0 −17.2 −20.5 −23.8 −26.9 −29.9 −32.8 −35.7 −38.1 −40.7 −43.0 −45.3 −47.7 −49.6 −51.7 −53.6 −55.4 −57.4 −59.3 −61.2 −63.1 −65.1 −67.2 −69.1 −71.0 −73.4 −75.6 −99.6 −132.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 0.957 0.948 0.935 0.914 0.891 0.862 0.838 0.812 0.780 0.748 0.719 0.690 0.665 0.638 0.615 0.596 0.579 0.562 0.547 0.538 0.527 0.519 0.511 0.506 0.499 0.493 0.493 0.488 0.484 0.486 0.516 0.600 3.498 3.497 3.456 3.391 3.334 3.273 3.199 3.116 3.013 2.919 2.820 2.729 2.636 2.544 2.451 2.363 2.277 2.213 2.121 2.056 1.974 1.918 1.856 1.800 1.743 1.689 1.636 1.589 1.541 1.498 1.187 0.972 0.014 0.027 0.040 0.052 0.063 0.073 0.082 0.090 0.096 0.101 0.105 0.108 0.109 0.110 0.110 0.109 0.107 0.105 0.103 0.100 0.098 0.096 0.094 0.093 0.092 0.093 0.095 0.098 0.102 0.108 0.220 0.355 0.995 0.985 0.977 0.960 0.942 0.921 0.899 0.875 0.851 0.827 0.802 0.779 0.758 0.740 0.723 0.707 0.690 0.678 0.668 0.658 0.648 0.639 0.630 0.626 0.618 0.614 0.607 0.604 0.597 0.595 0.577 0.569 8 Data Sheet PU10070EJ01V0DS 2SC5787 VCE = 1 V, IC = 3 mA, ZO = 50 Ω Frequency (GHz) MAG. S11 ANG. (deg.) −9.0 −19.1 −28.7 −37.4 −45.7 −53.1 −60.5 −67.1 −73.8 −79.8 −85.7 −91.9 −97.4 −102.9 −108.0 −113.7 −119.3 −124.2