NPN SILICON RF TRANSISTOR

www.DataSheet4U.com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number 2SC5754 2SC5754-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. 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Document No. PU10008EJ02V0DS (2nd edition) Date Published March 2003 CP(K) Printed in Japan The mark • shows major revised points. © NEC Compound Semiconductor Devices 2001, 2003 2SC5754 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) ° Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 13 5.0 1.5 500 735 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB THERMAL RESISTANCE Parameter Junction to Ambient Resistance Symbol Rth j-a1 Test Conditions Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB Stand alone device in free air Ratings 170 Unit °C/W °C/W Rth j-a2 570 2 Data Sheet PU10008EJ02V0DS 2SC5754 ELECTRICAL CHARACTERISTICS (TA = +25°C) ° Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Reverse Transfer Capacitance Maximum Available Power Gain Linear Gain Gain 1 dB Compression Output Power Collector Efficiency fT S21e Cre 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VBE = 1 V, IC = 0 mA VCE = 3 V, IC = 100 mA − − 40 − − 60 1 000 1 000 100 nA nA − VCE = 3 V, IC = 100 mA, f = 0.5 GHz VCE = 3 V, IC = 100 mA, f = 2 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 100 mA, f = 2 GHz VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz, Pin = 0 dBm, 1/2 Duty VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty 16 5.0 − − − − − 20 6.5 1.0 12.0 12.0 26.0 60 − − 1.5 − − − − GHz dB pF dB dB dBm % Note 2 MAG Note 3 GL PO (1 dB) ηC Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – √ (K2 – 1) ) S12 hFE CLASSIFICATION Rank Marking hFE Value FB R57 40 to 100 Data Sheet PU10008EJ02V0DS 3 2SC5754 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) ° TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) 1 000 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2.0 f = 1 MHz 1.5 Total Power Dissipation Ptot (mW) Mounted on Polyimide PCB 800 (38 × 38 mm, t = 0.4 mm) 735 600 1.0 400 205 Stand alone device in free air 0.5 200 0 25 50 75 100 125 150 0 1 2 3 4 5 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 100 10 1 0.1 0.01 VCE = 3 V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 450 IB : 0.5 mA step 400 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA IB = 0.5 mA 5 6 Collector Current IC (mA) Collector Current IC (mA) 350 300 250 200 150 100 50 0.001 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V DC Current Gain hFE 100 10 1 10 100 1 000 Collector Current IC (mA) 4 Data Sheet PU10008EJ02V0DS 2SC5754 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 30 25 20 15 10 5 0 0.1 |S21e|2 1 Frequency f (GHz) 10 MSG MAG VCE = 3 V IC = 100 mA 25 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 0.5 GHz 20 15 10 5 0 1 10 100 1 000 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 3 V f = 1 GHz MSG MAG 20 VCE = 3 V f = 2 GHz 15 |S21e|2 10 15 MSG 10 MAG 5 5 |S21e|2 0 1 10 100 1 000 0 1 10 100 1 000 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 3 V f = 2.5 GHz 15 10 MSG MAG 5 |S21e|2 0 1 10 100 1 000 Collector Current IC (mA) Data Sheet PU10008EJ02V0DS 5 2SC5754 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 20 GP 15 10 5 0 –15 VCE = 3.2 V, f = 0.9 GHz ICq = 20 mA, 1/2 Duty Pout IC 200 150 100 50 300 250 Collector Current IC (mA), Collector Efficiency η C (%) 30 25 20 VCE = 3.2 V, f = 2.4 GHz ICq = 20 mA, 1/2 Duty Pout 300 250 200 IC 150 15 10 5 GP 100 50 ηC –10 –5 0 5 10 ηC 0 –5 0 5 10 15 20 0 25 0 15 Input Power Pin (dBm) Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency η C (%) 30 25 20 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Pout 300 250 200 IC 150 30 25 20 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout 300 250 200 IC 150 15 GP 10 5 15 GP 10 5 100 50 100 50 ηC 0 –10 –5 0 5 10 15 0 20 ηC 0 –10 –5 0 5 10 15 0 20 Input Power Pin (dBm) Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency η C (%) 30 25 20 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Pout 300 250 200 IC 150 30 25 20 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout 300 250 200 IC 150 100 50 15 GP 10 5 15 GP 10 5 100 50 ηC 0 –10 –5 0 5 10 15 0 20 ηC 0 –10 –5 0 5 10 15 0 20 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10008EJ02V0DS Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 2SC5754 POWER SUPPLY IMPEDANCE, LOAD IMPEDANCE (Recommended value) Frequency f (GHz) 0.9 1.8 2.4 Collector to Emitter Voltage VCE (V) 2.8 to 3.6 2.8 to 3.6 2.8 to 3.6 Supply Impedance ZS (Ω) 8.4 − 5.2 j 6.3 − 16.4 j 5.9 − 22.1 j Load Impedance ZL (Ω) 15.1 − 4.3 j 15.8 − 6.9 j 15.2 − 17.9 j ZL ZS ZS RF input line B E C GND GND Tr. E RF output line ZL f = 0.9 GHz f = 1.8 GHz ZL ZS ZS ZL f = 2.4 GHz ZL ZS Data Sheet PU10008EJ02V0DS 7 2SC5754 APPLICATION EXAMPLE (Low-cost PA solution) Bluetooth Power Class 1 f = 2.4 GHz T80 R57 0 dBm 13 dBm 22 dBm 2SC5509 2SC5754 SS Cordless Phone f = 2.4 GHz R57 20 dBm 26 dBm 2SC5754 DCS1800 (GSM1800) Cellular Phone f = 1.8 GHz A 3 9Z 00 1 R55 R57 5 dBm 16 dBm 25 dBm 35 dBm 2SC5753 2SC5754 NE5520379A (MOS FET) Cordless Phone f = 0.9 GHz TH R57 –3 dBm 9 dBm 25 dBm 2SC5434 (3-pin TUSMM) 2SC5754 8 Data Sheet PU10008EJ02V0DS 2SC5754 EVALUATION CIRCUIT EXAMPLE : 1.8 GHz PA EVALUATION BOARD PCB Pattern and Element Layout VB VC C2 C4 SL1 SL4 C3 SL2 SL3 SL5 Tr. (2SC5754) C5 RF in C1 C6 RF out Remarks 1. 38 × 38 mm, t = 0.4 mm, εr = 4.55 double-sided copper-clad polyimide board 2. Back side : GND pattern 3. Solder plating on pattern 4. : Through holes Equivalent Circuit VB C2 VC C4 SL3 SL1 C1 RF in C3 SL2 Tr. SL4 SL5 C6 RF out C5 Parts List Parts C1, C6 C2 C3 C4 C5 SL1, SL4 SL2 SL3 SL5 18 pF 3 300 pF 3 pF 15 pF 1.5 pF w = 0.20 mm w = 0.76 mm, l = 2.5 mm w = 0.76 mm, l = 5 mm w = 0.76 mm, l = 1.5 mm Value Size Classification Multiplayer ceramic chip capacitor Multiplayer ceramic chip capacitor Multiplayer ceramic chip capacitor Multiplayer ceramic chip capacitor Multiplayer ceramic chip capacitor Strip line Strip line Strip line Strip line Data Sheet PU10008EJ02V0DS 9 2SC5754 EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD Collector Current IC (mA), Collector Efficiency η C (%) 30 25 20 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Pout 300 250 200 IC 150 30 25 20 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout 300 250 200 IC 150 100 50 15 10 5 GP 15 GP 10 5 100 50 ηC 0