LAPT
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3284 150 150 5 14 3 125(Tc=25°C) 150 –55 to +150
2SC3284
Application : Audio and General Purpose
(Ta=25°C) 2SC3284 100max 100max 150min 50min∗ 2.0max 60typ 200typ V pF
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)
(Ta=25°C) Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
4.0
V
a b
ø3.2±0.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.2typ tstg (µs) 1.5typ tf (µs) 0.35typ
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
0m
400 mA
300 mA
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3
I C – V BE Temperature Characteristics (Typical)
14 (V C E =4V)
14
A 0m 60 mA 0 50
12
75
A
200m
Collector Current I C (A)
A
Collector Current I C (A)
15 0m A
10
2
8
10 0m A
em
as
12
˚C
5A 0 0
0
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
0
–30
25
1 Base-Emittor Voltage V B E (V)
˚C
I B =20mA
5˚C
I C =10A
(Ca
(C
se
4
eT
1
Tem
50mA
5
p)
p)
2
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
(V C E =4V) 200 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125˚C 100 100
(V C E =4V)
Transient Thermal Resistance θ j- a ( ˚C/W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
3
Typ
25˚C –30˚C
1 0.5
50
50
20 0.02
0.1
0.5
1
5
10 14
20 0.02
0.1
0.5
1
5
10 14
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =12V) 80 40
Safe Operating Area (Single Pulse)
130
1m
10
P c – T a Derating
s
Cut-o ff F reque ncy f T (MH Z )
Typ
60 Collector Curren t I C ( A) 10 5
10
s
0m
Maxim um Power Di ssip ation P C (W)
m
D
s
100
W ith
C
In fin ite he
40
at si nk
50
1 0.5 Without Heatsink Natural Cooling
20
0 –0.02
–0.1
–1
–10
0.2 3 10 100 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
65
