Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q Low noise voltage NV. High foward current transfer ratio hFE. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 60 55 7 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT NV Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 2mA ICE = 100mA, IB = 10mA VCE = 1V, IC = 30mA VCB = 5V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 200 150 60 55 7 180 700 0.6 1 V V MHz mV min typ 1 0.01 max 100 1 Unit nA µA V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC — Ta 500 120 IB=400µA 350µA Ta=25˚C 400 100 300µA 250µA 80 200µA 60 100 2SC2634 IC — VCE 120 25˚C VCE=5V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) Ta=75˚C 80 –25˚C 300 150µA 60 200 40 100µA 40 100 20 50µA 20 0 0 40 80 120 160 200 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta=75˚C 25˚C –25˚C IC/IB=10 1000 hFE — IC 400 VCE=5V fT — I E VCB=5V Ta=25˚C Forward current transfer ratio hFE 800 Transition frequency fT (MHz) 10 30 100 350 300 250 200 150 100 50 600 Ta=75˚C 400 25˚C –25˚C 200 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 10 8 IE=0 f=1MHz Ta=25˚C 8 7 NF — IE 120 VCE=5V Rg=1kΩ Ta=25˚C NV — IC VCE=10V GV=80dB Function=FLAT Collector output capacitance Cob (pF) 100 Noise figure NF (dB) 6 5 4 3 2 1 f=100Hz Noise voltage NV (mV) 80 6 Rg=100kΩ 60 22kΩ 40 5kΩ 20 4 2 1kHz 10kHz –30 –100 –300 –1000 0 1 3 10 30 100 0 –10 0 0.01 0.03 0.1 0.3 1 Collector to base voltage VCB (V) Emitter current IE (µA) Collector current IC (mA) 2