Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)

Transistors 2SC2480 Silicon NPN epitaxial planer type Unit: mm For high-frequency amplification / oscillation / mixing 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 I Features • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 (0.65) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 50 150 150 −55 to +150 Unit V V V mA mW °C °C 1: Base 2: Emitter 3: Collector 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Marking Symbol: R I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency * Symbol VCBO VEBO hFE VBE fT Cre Crb PG Conditions IC = 100 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 10 V, IE = −2 mA VCB = 10 V, IE = −2 mA VCB = 10 V, IE = −15 mA, f = 200 MHz VCB = 10 V, IE = −1 mA, f = 10.7 MHz VCE= 6 V, IC = 0, f = 1 MHz VCB = 10 V, IE = −1 mA, f = 200 MHz Min 30 3 25 Typ Max Unit V V 250 720 mV 1 600 1.5 MHz pF pF dB 800 1 300 1 0.8 20 Common emitter reverse transfer capacitance Power gain Note) *: Rank classification Rank fT (MHz) Marking symbol T S No-rank 800 to 1 400 1 000 to 1 600 800 to 1 600 RT RS R Product of no-rank is not classified and have no indication for rank. 0.4±0.2 5° 1 2SC2480 PC  Ta 240 24 IB = 300 µA 200 20 Transistors IC  VCE Ta = 25°C 24 VCE = 10 V Ta = 25°C 20 IC  IB Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 250 µA 16 200 µA 12 150 µA 100 µA 50 µA 160 16 120 12 80 8 8 40 4 4 0 0 40 80 120 160 0 0 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) Base current IB (µA) IB  VBE 400 350 300 VCE = 10 V Ta = 25°C 60 IC  VBE 25°C 50 Ta = 75°C VCE = 10 V −25°C 240 hFE  IC VCE = 10 V 250 200 150 100 50 0 40 Forward current transfer ratio hFE 200 Collector current IC (mA) Base current IB (µA) 160 Ta = 75°C 120 25°C −25°C 30 20 80 10 40 0 0.4 0.8 1.2 1.6 2.0 0 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) VCE(sat)  IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 fT  I E 1 600 1 400 Cre  VCE Common emitter reverse transfer capacitance Cre (pF) VCB = 10 V Ta = 25°C 2.4 IC = 1 mA f = 10.7 MHz Ta = 25°C IC / IB = 10 Transition frequency fT (MHz) 2.0 1 200 1 000 800 600 400 200 0 − 0.1 − 0.3 1.6 1.2 0.3 0.1 0.03 0.01 0.1 25°C Ta = 75°C 0.8 –25°C 0.4 0.3 1 3 10 30 100 −1 −3 −10 −30 −100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistors Zrb  IE 120 VCB = 10 V f = 2 MHz Ta = 25°C 2SC2480 PG  IE 40 35 30 VCB = 10 V f = 100 MHz Rg = 50 Ω Ta = 25°C 12 NF  IE VCB = 10 V f = 100 MHz Rg = 50 Ω Ta = 25°C Reverse transfer impedance Zrb (Ω) 100 10 80 Noise figure NF (dB) −1 −3 −10 −30 −100 Power gain PG (dB) 8 25 20 15 10 60 6 40 4 20 2 5 0 − 0.1 − 0.2− 0.3 − 0.5 −1 −2 −3 −5 −10 0 − 0.1 − 0.3 0 − 0.1 − 0.3 −1 −3 −10 −30 −100 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) bib  gib 0 0 brb  grb 48 300 500 bfb  gfb 200 −10 − 0.4 Forward transfer susceptance bfb (mS) Reverse transfer susceptance brb (mS) yib = gib + jbib VCB = 10 V yrb = grb + jbrb VCB = 10 V yfb = gfb + jbfb VCB = 10 V 40 f = 200 MHz IE = −5 mA 32 −2 mA 300 500 600 16 900 Input susceptance bib (mS) −20 IE = −2 mA f = 900 MHz −5 mA − 0.8 600 −1.2 f = 900 MHz −2 mA IE = −5 mA −30 600 500 300 200 24 −40 −1.6 −50 −2.0 8 −60 0 10 20 30 40 50 −2.4 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 0 0 −60 −40 −20 0 20 40 Input conductance gib (mS) Reverse transfer conductance grb (mS) Forward transfer conductance gfb (mS) bob  gob 12 yob = gob + jbob VCE = 10 V 10 900 Output susceptance bob (mS) 8 600 IE = −2 mA 500 −5 mA 6 4 300 2 f = 200 MHz 0 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 3