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MCC
• •
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SC2371
Features
With TO-126 package Video applications
NPN Silicon Power Transistors
Rating 300 300 7.0 0.1 10 -55 to +150 -55 to +150 Unit V V V A W O C O C
Maximum Ratings
Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature
A
K D R E B
F G L H C
M
N
P
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage (IC=1.0mAdc, IB =0) Collector-Base Cutoff Current (VCB=200Vdc,IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) Forward Current Transfer ratio (IC=10mAdc, V CE=10Vdc) Collector-Emitter Saturation Voltage (IC=30mAdc, IB =3.0Adc) Min 300 ----Max --0.1 0.1 Units
1 2 J 3 J Q EMITTER COLLECTOR BASE
OFF CHARACTERISTICS
V (BR)CEO ICBO IEBO Vdc uAdc mAdc
!
PIN 1. PIN 2. PIN 3.
ON CHARACTERISTICS
hFE V CE(sat) 40 --250 1.5 --Vdc
www.mccsemi.com
Revision: 2 2003/04/30
