2SC4097 / 2SC1741S

Transistors 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S !Features 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. !External dimensions (Units : mm) (1) 2SC2412K 2SC4081 (1) 2SC4617 0.65 0.65 (2) 0.95 0.95 1.9 1.3 2.0 (1) (2) 0.2 0.5 0.5 (3) 0.4 (3) 0.3 1.6 2.8 2.1 0.8 0.2 0.15 1.6 0.7 0.9 0.15 0.2 1.25 0.3 (3) 0.55 0.15 0.8 1.1 0~0.1 0.3Min. !Structure Epitaxial planar type NPN silicon transistor Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (1) Emitter (2) Base (3) Collector 0~0.1 0.1Min. 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 (1) Emitter (2) Base (3) Collector 0~0.1 ROHM : EMT3 (1) Emitter (2) Base (3) Collector EIAJ : SC-75A JEDEC : SOT-416 Abbreviated symbol: B* Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 0.2 1.2 0.8 (2) (3) (1) 2SC1740S 4±0.2 2±0.2 3±0.2 0.2 1.2 0.32 0.4 0.4 0.8 0.22 (15Min.) 0.13 0~0.1 0.5 0.45+0.15 −0.05 0.15Max. 5 3Min. 2.5 +0.4 −0.1 0.5 0.45 +0.15 −0.05 (1) (2) (3) ROHM : VMT3 (1) Base (2) Emitter (3) Collector ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Abbreviated symbol: B* * Denotes hFE !Absolute maximum (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SC2412K, 2SC4081 Collector power 2SC4617, 2SC5658 dissipation 2SC1740S Junction temperature Storage temperature PC Symbol VCBO VCEO VEBO IC Limits 60 50 7 0.15 0.2 0.15 0.3 Tj Tstg 150 −55~+150 °C °C W Unit V V V A 0.7 1.0 1.6 (2) Transistors !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 − − 120 − − − Typ. − − − − − − − 180 2 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Max. − − − 0.1 0.1 560 0.4 − 3.5 Unit V V V µA µA − V MHz pF IC=50µA IC=1mA IE=50µA VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=−2mA, f=100MHz VCE=12V, IE=0A, f=1MHz Conditions !Packaging specifications and hFE Package Code Type 2SC2412K 2SC4081 2SC4617 2SC5658 2SC1740S hFE QRS QRS QRS QRS QRS − − − − − − − − − − Basic ordering unit (pieces) T146 3000 Taping T106 3000 − TL 3000 − − T2L 8000 − − − Bulk TP 5000 − − − − hFE values are classified as follows : Item hFE Q 120~270 R 180~390 S 270~560 !Electrical characterristic curves 50 100 VCE=6V COLLECTOR CURRENT : IC (mA) Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 20 10 5 Ta=100°C 25°C −55°C 80 0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA 10 Ta=25°C 30µA 27µA 8 24µA 21µA 60 0.25mA 0.20mA 6 18µA 15µA 2 1 0.5 0.2 0.1 0 40 0.15mA 0.10mA 4 12µA 9µA 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 2 6µA 3µA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( Ι ) Fig.3 Grounded emitter output characteristics ( ΙΙ ) Transistors 500 Ta=25°C 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S 500 Ta=100°C VCE=5V 3V 1V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V 0.5 Ta=25°C DC CURRENT GAIN : hFE 200 DC CURRENT GAIN : hFE 200 25°C −55°C 0.2 IC/IB=50 20 10 100 100 0.1 0.05 50 50 0.02 20 10 0.2 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig. 6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=10 0.5 TRANSITION FREQUENCY : fT (MHz) IC/IB=50 500 Ta=25°C VCE=6V 0.2 Ta=100°C 25°C −55°C 0.2 0.1 0.05 0.1 0.05 Ta=100°C 25°C −55°C 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) Fig.9 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) 10 Cib Ta=25°C f=1MHz IE=0A IC=0A 200 Ta=25°C f=32MHZ VCB=6V 100 5 50 2 Co 20 b 1 0.2 0.5 1 2 5 10 20 50 10 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.11 Base-collector time constant vs. emitter current