NPN Silicon Epitaxial Transistors

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  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623 High DC Current Gain: hFE=200 TYP.(V CE=6.0V, IC=1.0mA) High voltage: VCEO=50V NPN Silicon Epitaxial Transistors Unit V V V mA mW O C O C F Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 60 5.0 100 200 -55 to +150 -55 to +150 SOT-23 A D C B E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector Cutoff Current (VCB=60Vdc,IE =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) DC Current Gain* (IC=1.0mAdc, VCE=6.0Vdc) Collector Saturation Voltage* (IC=100mAdc, IB =10mAdc) Base Saturation Voltage* (IC=100mAdc,IB =10mAdc) Base Emitter Voltage* (V CE=6.0Vdc, IC=1.0mAdc) Collector Capacitance (V CB=6.0Vdc, IE =0, f=1.0MHz) Gain Bandwidth product (VCE=6.0Vdc, IE =10mAdc) Min ----Typ ----Max 0.1 0.1 Units G H J OFF CHARACTERISTICS ICBO IEBO uAdc K uAdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 DIMENSIONS MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 ON CHARACTERISTICS hF V CE(sat) V BE(SAT) V BE Cob fT 90 ----0.55 ----200 0.15 0.86 0.62 3.0 250 600 0.3 1.0 0.65 ------Vdc Vdc Vdc pF MHz MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm hFE CLASSIFICATION Marking L4 L5 hFE 90-180 135-270 * Pulse Test PW<350us, duty cycle<2% L6 200-400 L7 300-600 .037 .950 .037 .950 www.mccsemi.com Revision: 2 2003/04/30