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Power Transistors
www.jmnic.com
2SC1580
Silicon NPN Transistors
Features
With TO-3 package
1B 2E 3C
Absolute Maximum Ratings Tc=25
SYMBOL VCB VCEO VCER VEB IB IC PD Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Emitter to base voltage Base Current Collector current-Continuous Total Power Dissipation@TC=25 Junction temperature Storage temperature 15 150 200 -65~200 A W 5.0 V RATING 600 500 UNIT V V
TO-3
Electrical Characteristics Tc=25
SYMBOL VCEO VCER ICEO ICEX ICBO VEBO VCE(sat-1) VCE(sat-2) VCE(sat-3) VCE(sat-4) hFE-1 hFE-2 VBE(on) fT hfe fhfe PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Collector-emitter breakdown voltage Emitter Cutoff Current Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Base-emitter On voltages Current Gain-Bandwidth Product Small-Signal Current Gain Small-Signal Current Gain Cutoff Frequency IC=4A; VCE=5V 20 IC=6.0A; IB=1A 5.0 V Vcb=600V IE=0 0.1 mA CONDITIONS IC=5mA; IB=0 VCE=500V; IB=0 MIN 500 MAX UNIT V mA
0.5
