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Part Number |
2SB744 |
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Manufacturer |
MCC |
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Semiconductor DataSheet |
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DataSheet View |
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MCC
Features
• • • •
omponents 20736 Marilla Street Chatsworth !"# $
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2SB744
Capable of 10Watts of Power Dissipation. Collector-current 3.0A Collector-base Voltage 70V O Operating and storage junction temperature range: -55 C to O +150 C
PNP Silicon Power Transistor
Maximum Ratings
Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 45 70 5.0 3.0 10 -55 to +150 -55 to +150 Unit V V V A W O C O C
D
A
K
R E B
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F G L
M
N
P
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Sustaining Voltage (IC=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (IC=1.0mAdc, IE=0) Emitter-Base Breakdown Voltage (IE=1.0mAdc, IC=0) Forward Current Transfer ratio (IC=20mAdc, VCE=5.0Vdc) Forward Current Transfer ratio (IC=0.5Adc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=1.5Adc, IB=0.15Adc) Min 45 70 5.0 Max ------Units Vdc Vdc
H
C
OFF CHARACTERISTICS
VCEO(SUS) V(BR)CBO V(BR)EBO
1 2 J 3 J Q EMITTER COLLECTOR BASE
Vdc
PIN 1. PIN 2. PIN 3.
ON CHARACTERISTICS
hFE(1) hFE(2) VCE(sat) 30 60 ----320 2.0 ----Vdc
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Revision: 2 2003/04/30
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