N-channel TrenchMOS FET

2N7002E N-channel TrenchMOS™ FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS™ technology 1.3 Applications s Logic level translator s High speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 3 Ω s ID ≤ 385 mA s Ptot = 0.83 W 2. Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 2 3 D Simplified outline Symbol G SOT23 mbb076 S Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 3. Ordering information Table 2: Ordering information Package Name 2N7002E TO-236AB Description plastic surface mounted package; 3 leads Version SOT23 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs tp ≤ 50 µs; pulsed; duty cycle = 25 % Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −65 −65 Max 60 60 ±30 ±40 385 245 1.5 0.83 +150 +150 385 1.5 Unit V V V V mA mA A W °C °C mA A Source-drain diode 9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 April 2005 2 of 11 Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 120 Pder (%) 80 03aa17 120 Ider (%) 80 03aa25 40 40 0 0 50 100 150 Tsp (°C) 200 0 0 50 100 150 Tsp (°C) 200 P tot P der = ------------------------ × 100 % P ° tot ( 25 C ) ID I der = -------------------- × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 03ai10 10 ID (A) Limit RDSon = VDS / ID 1 tp = 10 µ s 100 µ s 1 ms 10-1 DC 10 ms 100 ms 10-2 1 10 VDS (V) 102 Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 April 2005 3 of 11 Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 5. Thermal characteristics Table 4: Rth(j-sp) Rth(j-a) Thermal characteristics Conditions Figure 4 mounted on a printed-circuit board; minimum footprint; vertical in still air Min Typ Max 150 350 Unit K/W K/W thermal resistance from junction to solder point thermal resistance from junction to ambient Symbol Parameter 103 Zth(j-sp) K/W 102 δ = 0.5 0.2 0.1 10 0.05 0.02 P 03ai09 δ= tp T 1 single pulse tp t T 10-1 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 April 2005 4 of 11 Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C Tj = 150 °C Tj = −55 °C IDSS drain-source leakage current VDS = 48 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±15 V; VDS = 0 V VGS = 10 V; ID = 500 mA; Figure 6 and 8 Tj = 25 °C Tj = 150 °C VGS = 4.5 V; ID = 75 mA; Figure 6 and 8 Dynamic characteristics gfs Ciss Coss Crss ton toff VSD trr Qr forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-off delay time source-drain (diode forward) voltage reverse recovery time recovered charge VDD = 50 V; RL = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω VDS = 10 V; ID = 200 mA VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 100 300 25 18 7.5 3 12 0.85 30 30 40 30 10 10 15 1.5 mS pF pF pF ns ns V ns nC 2.3 4.2 3.1 3 5.55 4 Ω Ω Ω 0.01 10 1 10 100 µA µA nA 1 0.6 2 3 3.5 V V V 60 55 V V Conditions Min Typ Max Unit Source-drain diode IS = 300 mA; VGS = 0 V; Figure 12 IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V 9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 April 2005 5 of 11 Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 1 ID (A) 0.8 03ai12 Tj = 25 °C VGS (V) = 10 7 6 5 4.5 6 VGS (V) = RDSon (Ω) 4 03ai14 3.5 4 Tj = 25 °C 4.5 5 6 7 10 0.6 4 0.4 3.5 2 0.2 3 2.5 0 0 0.8 1.6 2.4 VDS (V) 3.2 0 0 0.2 0.4 0.6 0.8 ID (A) 1 Tj = 25 °C Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03ai16 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 2.4 a 1.8 03aa28 0.8 ID (A) 0.6 150 °C Tj = 25 °C 0.4 1.2 0.2 0.6 0 0 2 4 VGS (V) 6 0 -60 0 60 120 Tj (°C) 180 Tj = 25 °C and 150 °C; VDS > ID × RDSon R DSon a = ----------------------------R DSon ( 25 °C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values 9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 April 2005 6 of 11 Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 2.4 VGS(th) (V) typ 1.8 03aa34 10-1 ID (A) 10-2 03aa37 10-3 1.2 min 10-4 min typ 0.6 10-5 0 -60 10-6 0 60 120 Tj (°C) 180 0 0.6 1.2 1.8 VGS (V) 2.4 ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature 102 03ai18 Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ai17 0.8 IS (A) C (pF) 0.6 Ciss 10 Coss 0.4 Crss 0.2 150 °C Tj = 25 °C 1 10-1 1 10 VDS (V) 102 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V; f = 1 MHz Tj = 25 °C and 150 °C; VGS = 0 V Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 April 2005 7 of 11 Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 7. Package outline Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB JEITA EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-11-04 Fig 13. Package outline SOT23 9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 April 2005 8 of 11 Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 8. Revision history Table 6: Revision history Release date 20050426 Data sheet status Product data sheet Change notice Doc. number 9397 750 14944 Supersedes 2N7002E-01 Document ID 2N7002E_2 Modifications: • • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Table 5 “Characteristics” Addition of upper limit for VGS(th). Product data 9397 750 09095 - 2N7002E-01 20020211 9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 April 2005 9 of 11 Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 9. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions Short-form specification — The data in a short-form specification is extract