POWER TRANSISTORS PNP SILICON



Part  Number 2N3741R
Manufacturer Seme LAB
Semiconductor DataSheet

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www.DataSheet4U.com 2N3741R MECHANICAL DATA Dimensions in mm POWER TRANSISTORS PNP SILICON 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 2 0.71 (0.028) 0.86 (0.034) FEATURES • Hermetically Package. • Low Saturation Voltage • High Gain 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 Package (TO-213AA) Pin 1 = Base Pin 2 = Emitter Case = Collector Complementary to NPN 2N3740 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB PD Tstg Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Total Device Dissipation at Tcase = 25°C Derate 25°C Operating and Storage Temperature Range 80V 80V 7V 4A 10A 2A 25W 0.143W/°C –65 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3144 Issue 1 2N3741R ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions IB = 0 IE = 0 IB = 0 VBE(OFF) = 1.5V VBE(OFF) = 1.5V TC = 150°C IEBO Emitter Base Cut–Off Current VEB = 7V IC = 100mA hFE* DC Current Gain IC = 250mA IC = 500mA IC = 1A VCE(sat)* VBE* Collector – Emitter Saturation Voltage IC = 1A Base – Emitter Saturation Voltage DYNAMIC CHARACTERISTICS ft Cob hfe Transition Frequency Output Capacitance Small Signal Current Gain IC = 100mA VCB = 10V IC = 50mA VCE = 10V f = 1MHz IC = 0 f = 100KHz VCE = 10V f = 1KHz 25 3 4 100 MHz pF — IC = 250mA VCE = 1V VCE = 1V VCE = 1V VCE = 1V IB = 125mA IB = 1V 40 30 20 10 0.6 1.0 V 180 — Min. 80 Typ. Max. Unit V ELECTRICAL CHARACTERISTICS VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 100mA ICBO ICEO ICEX Collector Base Cut–Off Current Collector Emiiter Cut–Off Current Collector Cut–Off Current VCB = 80V VCE = 60V VCE = 80V VCE = 60V 100 1.0 100 1 0.5 µA mA µA mA mA * Pulse Width ≤ 300µs , Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3144 Issue 1



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