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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MGP20N40CL/D Advanced Information SMARTDISCRETES IGBT ™ MGP20N40CL Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED) ® C G G Rge C E E CASE 221A–06, Style 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage Gate–Emitter Voltage Collector Current — Continuous @ TC = 25°C Reversed Collector Current – pulse width Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 12 150 3.5 – 55 to 175 Unit Vdc Vdc Vdc Adc Apk Watts kV °C t 100 m s IC ICR PD ESD TJ, Tstg Total Power Dissipation @ TC = 25°C (TO–220) Electrostatic Voltage — Gate–Emitter Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Rq JC Rq JA TL 1.0 62.5 275 10 lbf in (1.13 N m) °C/W °C UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C @ Starting TJ = 150°C SMARTDISCRETES and TMOS are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. EAS 550 150 mJ REV 1 © Motorola TMOS Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MGP20N40CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (IClamp = 10 mA, TJ = –40 to 150°C) Zero Gate Voltage Collector Current (VCE = 350 V, VGE = 0 V, TJ = 150°C) (VCE = 15 V, VGE = 0 V, TJ = 150°C) Resistance Gate–Emitter (TJ = –40 to 150°C) Gate–Emitter Breakdown Voltage (IG = 2 mA) Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = 150°C) Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA) ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, IC = 1 mA) (VCE = VGE, IC = 1 mA, TJ = 150°C) Collector–Emitter On–Voltage (VGE = 5 V, IC = 5 A) (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 150°C) Forward Transconductance (VCE DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Total Gate Charge Gate–Emitter Charge Gate–Collector Charge Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time ( (VCC = 320 V, IC = 20 A, , , L = 200 m H, RG = 1 KW ) ( (VCC = 14 V, IC = 20 A, , , L = 200 m H, RG = 1 KW ) (VCC = 280 V, IC = 20 A, V A VGE = 5 V) Qg Qgs Qgd td(off) tf td(on) tr — — — — — — — 45 8.0 20 14 4.0 2.0 6.0 80 — — — — — — µs µs nC (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss — — — 2800 200 25 — — — pF VGE(th) 1.0 0.75 VCE(on) — — — gfs 10 1.1 1.4 1.4 18 1.4 1.9 1.8 — S 1.7 — 2.2 1.8 V V BVCES 370 ICES — — RGE BVGES ICES BVCER 10k 11 — 26 — — 16k 13 — 40 500 100 30k 15 50 120 405 430 Vdc Symbol Min Typ Max Unit mA W "V mA V u 5.0 V, IC = 10 A) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N40CL TYPICAL ELECTRICAL CHARACTERISTICS 40 VGE = 10 V I C , COLLECTOR CURRENT (AMPS) 30 4V 20 40 TJ = 25°C I C , COLLECTOR CURRENT (AMPS) 30 4V 20 VGE = 10 V 5V TJ = 125°C 5V 10 3V 0 0 2 4 6 8 10 10 3V 0 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25°C Figure 2. Output Characteristics, TJ = 125°C VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 40 I C , COLLECTOR CURRENT (AMPS) VCE = 10 V 30 2.2 VGE = 5 V 2.0 1.8 15 A 1.6 1.4 1.2 1.0 –50 10 A IC = 20 A 20 TJ = 125°C 10 25°C 0 1 2 3 4 5 0 50 100 150 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature 10000 VGE = 0 V 1000 Ciss TJ = 25°C C, CAPACITANCE (pF) 100 Coss 10 Crss 1.0 0 25 50 75 100 125 150 175 200 COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance Variation Motorola TMOS Power MOSFET Transistor Device Data 3 MGP20N40CL VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) Qg TOTAL SWITCHING ENERGY LOSSES (mJ) 8 60 50 40 30 20 10 0 TF VDD = 320 V VGE = 5 V TJ = 125°C IC = 20 A 60 50 Eoff SWITCHING TIME ( m S) Td(off) 40 30 20 10 0 5000 6 Qgs 4 Qgd 2 TJ = 25°C IC = 20 A 0 0 10 20 30 40 0 1000 2000 3000 4000 Qg, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (OHMS) Figure 6. Gate–to–Emitter and Collector–to–Emitter Voltage vs Total Charge Figure 7. Total Switching Losses versus Gate Temperature TOTAL SWITCHING ENERGY LOSSES (mJ) 50 TOTAL SWITCHING ENERGY LOSSES (mJ) 6 5 SWITCHING TIME ( m S) 4 26 24 22 20 18 16 14 12 25 50 75 100 TF VCC = 320 V VGE = 5 V RG = 1000 W L = 200 m H IC = 20 A 6 40 Eoff SWITCHING TIME ( m S) 30 Td(off) 20 TF VDD = 320 V VGE = 5 V TJ = 25°C IC = 20 A 3 2 1 0 5000 Td(off) Eoff 10 0 0 1000 2000 3000 4000 4 125 RG, GATE RESISTANCE (OHMS) TC, CASE TEMPERATURE (°C) Figure 8. Total Switching Losses versus Gate Resistance Figure 9. Total Switching Losses versus Case Temperature 25 TOTAL SWITCHING ENERGY LOSSES (mJ) VCC = 320 V VGE = 5 V RG = 1000 W L = 200 m H TJ = 125°C Eoff 25 20 3 mH 20 20 LATCH CURRENT (AMPS) 16 SWITCHING TIME ( m S) 12 10 mH 15 Td(off) 15 8.0 10 TF 5 5 10 15 10 4.0 5 20 0 0 25 50 75 100 125 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) TEMPERATURE (°C) Figure 10. Total Switching Losses versus Collector Current Figure 11. Latch Current versus Temperature 4 Motorola TMOS Power MOSFET Transistor Device Data MGP20N40CL 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E – 05 1.0E – 04 1.0E – 03 1.0E – 02 t, TIME (s) t2 DUTY CYCLE, D = t1/t2 1.0E – 01 t1 P(pk) RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1.0E+00 1.0E+01 Figure 12. Thermal Response PACKAGE DIMENSIONS –T– B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 Q 1 2 3 A U K STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR H Z L V G D N R J CASE 221A–06 (TO–220AB) ISSUE Y Motorola TMOS Power MOSFET Transistor Device Data 5 MGP20N40CL Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Mfax™: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, To

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