(1N5820 - 1N5822) Axial Lead Rectifiers

www.DataSheet4U.com 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features http://onsemi.com • • • • • Extremely Low VF Low Power Loss/High Efficiency Low Stored Charge, Majority Carrier Conduction Shipped in plastic bags, 500 per bag Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to the part number • Pb−Free Packages are Available* Mechanical Characteristics: SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Polarity: Cathode indicated by Polarity Band AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 Leads are Readily Solderable MARKING DIAGRAM A 1N 582x YYWWG G A = Assembly Location 1N582x = Device Code x = 0, 1, or 2 YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 June, 2006 − Rev. 9 Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non−Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (Note 1) VR(equiv) v 0.2 VR(dc), TL = 95°C (RqJA = 28°C/W, P.C. Board Mounting, see Note 5) Ambient Temperature Rated VR(dc), PF(AV) = 0 RqJA = 28°C/W Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Symbol VRRM VRWM VR VRSM VR(RMS) IO 1N5820 20 1N5821 30 1N5822 40 Unit V 24 14 36 21 3.0 48 28 V V A TA 90 85 80 °C IFSM 80 (for one cycle) A TJ, Tstg 65 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *THERMAL CHARACTERISTICS (Note 5) Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 28 Unit °C/W *ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) TL = 25°C TL = 100°C 1. Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820−22. Symbol VF 0.370 0.475 0.850 iR 2.0 20 2.0 20 2.0 20 0.380 0.500 0.900 0.390 0.525 0.950 mA 1N5820 1N5821 1N5822 Unit V http://onsemi.com 2 1N5820, 1N5821, 1N5822 ORDERING INFORMATION Device 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5821RLG 1N5822 1N5822G 1N5822RL 1N5822RLG Package Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Shipping † 500 Units/Bag 500 Units/Bag 1500/Tape & Reel 1500/Tape & Reel 500 Units/Bag 500 Units/Bag 1500/Tape & Reel 1500/Tape & Reel 500 Units/Bag 500 Units/Bag 1500/Tape & Reel 1500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 1N5820, 1N5821, 1N5822 NOTE 3 — DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max) * RqJAPF(AV) * RqJAPR(AV)(1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RqJA = Junction−to−ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) * RqJAPR(AV) Substituting equation (2) into equation (1) yields: TA(max) = TR * RqJAPF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For Table 1. Values for Factor F Circuit Load Sine Wave Square Wave Half Wave Resistive 0.5 0.75 Capacitive* 1.3 1.5 Full Wave, Bridge Resistive 0.5 0.75 Capacitive 0.65 0.75 Full Wave, Center Tapped*† Resistive 1.0 1.5 Capacitive 1.3 1.5 use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: VR(equiv) = V(FM) F (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5821 operated in a 12−volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RqJA = 40°C/W. Step 1. Find VR(equiv). Read F = 0.65 from Table 1, NVR(equiv) = (1.41) (10) (0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 108°C @ VR = 9.2 V and RqJA = 40°C/W. Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W @ I (FM) + 10 and I F(AV) + 1.0 A. I(AV) (2) Step 4. Find TA(max) from equation (3). TA(max) = 108 * (0.85) (40) = 74°C. **Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR−prefix devices, using PF(AV) from Figure 6. *Note that VR(PK) [ 2.0 Vin(PK). †Use line to center tap voltage for Vin. http://onsemi.com 4 1N5820, 1N5821, 1N5822 125 TR , REFERENCE TEMPERATURE (° C) 20 125 10 8.0 TR , REFERENCE TEMPERATURE (° C) 15 20 115 15 10 8.0 115 105 RqJA (°C/W) = 70 95 50 40 85 75 2.0 3.0 4.0 5.0 7.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 28 105 RqJA (°C/W) = 70 95 50 40 85 75 3.0 4.0 5.0 7.0 10 15 20 30 VR, REVERSE VOLTAGE (VOLTS) 28 Figure 1. Maximum Reference Temperature 1N5820 Figure 2. Maximum Reference Temperature 1N5821 125 TR , REFERENCE TEMPERATURE (° C) 20 115 R qJL , THERMAL RESISTANCE JUNCTION−TO−LEAD (° C/W) 15 10 8.0 105 RqJA (°C/W) = 70 50 85 40 28 75 4.0 5.0 7.0 10 15 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 40 35 30 25 20 15 10 5.0 0 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0 L, LEAD LENGTH (INCHES) BOTH LEADS TO HEATSINK, EQUAL LENGTH MAXIMUM TYPICAL 95 Figure 3. Maximum Reference Temperature 1N5822 Figure 4. Steady−State Thermal Resistance 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady−state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL LEAD LENGTH = 1/4″ Ppk tp t1 Ppk TIME DUTY CYCLE = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where: DTJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp, etc. 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k Figure 5. Thermal Response http://onsemi.com 5 1N5820, 1N5821, 1N5822 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IF(AV), AVERAGE FORWARD CURRENT (AMP) TJ ≈ 125°C NOTE 4 − APPROXIMATE THERMAL CIRCUIT MODEL SINE WAVE I (FM) + p (Resistive Load) I (AV) Capacitive Loads 5.0 10 20 RqS(A) RqL(A) RqJ(A) RqJ(K ) RqL(K) RqS(K) TA(K) dc TA(A) TL(A) TC(A) TJ PD TC(K) TL(K) SQUARE WAVE Figure 6. Forward Power Dissipation 1N5820−22 Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heats