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Infineon Technologies
Infineon Technologies

13N03LA Datasheet

Search -----> IPD13N03LA


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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
IPD13N03LA
IPU13N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
13 m
30 A
P-TO252-3-11
P-TO251-3-21
Type
IPD13N03LA
IPU13N03LA
Package
P-TO252-3-11
P-TO251-3-21
Ordering Code
Q67042-S4159
Q67042-S4160
Marking
13N03LA
13N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C3)
I D=24 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Value
30
30
210
60
6
±20
46
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.4
page 1
2004-02-04
Page 1

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Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area5)
IPD13N03LA
IPU13N03LA
min.
Values
typ.
Unit
max.
- - 3.2 K/W
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=20 µA
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
V DS=25 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=20 A
V GS=4.5 V, I D=20 A,
SMD version
V GS=10 V, I D=30 A
V GS=10 V, I D=30 A,
SMD version
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
25
1.2
-
-
-
-
-
-
-
-
18
- -V
1.6 2
0.1 1 µA
10 100
10 100 nA
17.5 21.9 m
17.7 22.1
10.8 13.0
10.7 12.8
0.9 -
36 - S
2) Current is limited by bondwire; with an R thJC=3.2 K/W the chip is able to carry 47 A.
3) See figure 3
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.4
page 2
2004-02-04
Page 2

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Parameter
Symbol Conditions
IPD13N03LA
IPU13N03LA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=15 A, R G=2.7
-
-
-
-
-
-
-
784 1043 pF
303 402
41 62
5.4 8 ns
4.6 7
15 23
2.6 3.9
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs - 3 4 nC
Q g(th)
- 1.3 1.7
Q gd V DD=15 V, I D=15 A, - 1.8 2.7
Q sw
V GS=0 to 5 V
- 35
Qg - 6 8
V plateau
- 3.4 - V
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
- 6 7 nC
Q oss
V DD=15 V, V GS=0 V
-
7
9
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
- - 30 A
- - 210
- 0.95 1.2 V
- - 10 nC
6) See figure 16 for gate charge parameter definition
Rev. 1.4
page 3
2004-02-04
Page 3

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1 Power dissipation
P tot=f(T C)
50
2 Drain current
I D=f(T C); V GS10 V
40
IPD13N03LA
IPU13N03LA
40
30
30
20
20
10
10
0
0 50 100
T C [°C]
3 Safe operation area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
1000
150
0
200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
200
100
limited by on-state
resistance
1 µs
10 µs
100 µs
DC
10
1 ms
10 ms
1
0.1
Rev. 1.4
1 10
V DS [V]
0.5
1
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
100
0.01 0
10-6
0
10-5
0
10-4
0
10-3
t p [s]
0
10-2
0
10-1
1
100
page 4
2004-02-04
Page 4
Part Number 13N03LA
Manufactur Infineon Technologies
Description Search -----> IPD13N03LA
Total Page 10 Pages
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13N03LA datasheet
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