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Part Number |
123NQ100PBF |
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Manufacturer |
International Rectifier |
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Semiconductor DataSheet |
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DataSheet View |
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Bulletin PD-21144 rev. A 10/06
123NQ100PbF
SCHOTTKY RECTIFIER 120Amp
Major Ratings and Characteristics Characteristics
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Description/ Features Units
A V A V °C The 123NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. 175 °C TJ operation Low forward voltage drop
Values
120 100
IF(AV) Rectangular waveform VRRM IFSM VF TJ @ tp = 5 μs sine @120Apk, TJ=125°C range
12800 0.73 - 55 to 175
High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free
Case Styles
HALF-PAK (D-67)
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1
123NQ100PbF
Bulletin PD-21144 rev. A 10/06
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
123NQ100PbF
100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7 EAS Non-Repetitive Avalanche Energy IAR Repetitive Avalanche Current 12800 1800 15 1 A mJ A 5μs Sine or 3μs Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied
123NQ
120
Units Conditions
A 50% duty cycle @ TC = 133 °C, rectangular wave form
TJ = 25 °C, IAS = 5.5 Amps, L = 1 mH Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop * See Fig. 1 (1)
123NQ
0.91 1.26 0.73 0.9 3 40 2650 7.0 10000
Units
V V V V mA mA pF nH V/ μs @ 120A @ 240A @ 120A @ 240A
Conditions
TJ = 25 °C TJ = 125 °C VR = rated VR
IRM CT LS
Max. Reverse Leakage Current * See Fig. 2 Max. Junction Capacitance Typical Series Inductance
TJ = 25 °C TJ = 125 °C
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change (Rated VR)
(1) Pulse Width 500μs
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
123NQ
-55 to 175 -55 to 175 0.38 0.05 30 (1.06) Min. Max. Min. Max. 3 (26.5) 4 (35.4) 3.4 (30) 5 (44.2)
Units
°C °C °C/W °C/W g (oz.)
Conditions
RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight MountingTorque TerminalTorque Case Style
DCoperation
* See Fig. 4
Mounting surface , smooth and greased
Non-lubricated threads Nm (Ibf-in)
HALF PAK Module
2
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123NQ100PbF
Bulletin PD-21144 rev. A 10/06
1000
1000 TJ = 175°C 100
Reverse Current - I R (mA)
150°C 125°C 100°C 75°C
10 1 0.1 0.01 0.001
Tj = 175°C
50°C 25°C
Instantaneous Forward Current - I F (A)
100
0
20
40
60
80
100
Reverse Voltage - V R (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
10000
10 Tj = 125°C
Junction Capacitance - C T (pF)
TJ= 25°C
1000
Tj = 25°C
1 0.0 0.5 1.0 1.5 2.0
Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics
1
100
0 10 20 30 40 50 60 70 80 90 100110
Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
(°C/W)
D = 0.75 D = 0.50
0.1
thJC
D = 0.33 D = 0.25 D = 0.20
Thermal Impedance Z
0.01
Single Pulse (Thermal Resistance)
0.001 1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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123NQ100PbF
Bulletin PD-21144 rev. A 10/06
180
Allowable Case Temperature (°C) Average Power Loss (Watts)
120 100 80 60 40 20 0
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
170 160 150 140 130 120 110 100 0 30 60 90 120 150 180
Average Forward Current - I F (AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
Non-Repetitive Surge Current - I FSM (A)
100000
DC
RMS limit
DC
Square wave (D=0.50) 80% rated Vr applied see note (2)
0
20 40 60 80 100 120 140 160 180
Average Forward Current - I F (AV) (A)
Fig. 6 - Forward Power Loss Characteristics
10000
1000
100 10 100 1000 10000
Square Wave Pulse Duration - t p (microsec) Fig. 7 - Max. Non-Repetitive Surge Current
L HIGH-S PEED S CH WIT FREE-WHEEL DIODE 40HF L40S 02 Vd = 25 Volt
DUT
IR P460 F R = 25 ohm g
+
CURR ENT MONIT OR
Fig. 8 - Unclamped Inductive Test Circuit
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
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123NQ100PbF
Bulletin PD-21144 rev. A 10/06
Outline Table
HALF-PAK (D-67) Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
12
1
3
2
N
3
Q
4
100 PbF
5 6
1 2 3 4 5 6
-
Average Current Rating (x 10) Product Silicon Identification N = Not Isolated Q = Schottky Rectifier Diode Voltage Rating (100 = 100V) Lead-Free
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123NQ100PbF
Bulletin PD-21144 rev. A 10/06
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/06
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