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Infineon Technologies Corporation
Infineon Technologies Corporation

06N03LA Datasheet

Search -----> IPB06N03LA


06N03LA Datasheet Preview


OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
P-TO263-3-2
• 175 °C operating temperature
• dv /dt rated
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IPB06N03LA
IPI06N03LA, IPP06N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
5.9 m
50 A
P-TO262-3-1
P-TO220-3-1
Type
IPB06N03LA
IPI06N03LA
IPP06N03LA
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
Q67042-S4146
Q67042-S4147
Q67042-S4148
Marking
06N03LA
06N03LA
06N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C2)
I D=50 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
225
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.2
page 1
2003-06-18
Page 1

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area4)
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IPB06N03LA
IPI06N03LA, IPP06N03LA
min.
Values
typ.
Unit
max.
- - 1,8 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=40 µA
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
25
1,2
-
-
1,6
0,1
-V
2
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=25 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=30 A
V GS=4.5 V, I D=30 A,
SMD version
V GS=10 V, I D=30 A
V GS=10 V, I D=30 A,
SMD version
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
-
-
-
-
-
-
-
26
10 100
10 100 nA
7,9 9,9 m
7,6 9,5
5,2 6,2
4,9 5,9
1,2 -
52 - S
1) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 91 A.
2) See figure 3
3) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 2
2003-06-18
Page 2

Parameter
Symbol Conditions
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IPB06N03LA
IPI06N03LA, IPP06N03LA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7
-
-
-
-
-
-
-
1995
848
124
11
25
30
7,0
2653 pF
1128
186
16 ns
38
45
10
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs - 7 9 nC
Q g(th)
- 3,2 4,2
Q gd V DD=15 V, I D=25 A,
Q sw
V GS=0 to 5 V
-
-
57
8 12
Q g - 16 22
V plateau
- 3,3 - V
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
- 14 19 nC
Q oss
V DD=15 V, V GS=0 V
-
18 22
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
- - 50 A
- - 350
- 0,94 1,2 V
- - 10 nC
5) See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2003-06-18
Page 3

1 Power dissipation
P tot=f(T C)
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2 Drain current
I D=f(T C); V GS10 V
IPB06N03LA
IPI06N03LA, IPP06N03LA
90
80
70
60
50
40
30
20
10
0
0 50 100
T C [°C]
3 Safe operation area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
1000
150
60
40
20
0
200 0
50 100 150
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
200
100
limited by on-state
resistance
DC
10
1 µs
10 µs
100 µs
1 ms
10 ms
1 0.5
0.2
0.1
0,1 0.05
0.02
0.01
single pulse
0,01
1
0,1
Rev. 1.2
1 10
V DS [V]
0,001
100 010-6 100-5 100-4 100-3 10-02 10-10 100 1
t p [s]
page 4
2003-06-18
Page 4
Part Number 06N03LA
Manufactur Infineon Technologies Corporation
Description Search -----> IPB06N03LA
Total Page 10 Pages
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06N03LA datasheet
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06N03LA datasheet
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