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W9NK90Z Datasheet

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STB9NK90Z - STFPNK90Z
STP9NK90Z - STW9NK90Z
N-channel 900V - 1.1- 8A - TO-220 /FP- D2PAK - TO-247
Zener-protected superMESHTM MOSFET
General features
Type
STB9NK90Z
STW9NK90Z
STP9NK90Z
STF9NK90Z
VDSS
900V
900V
900V
900V
RDS(on)
<1.3
<1.3
<1.3
<1.3
ID
8A
8A
8A
8A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Pw
160 W
160 W
160 W
160 W
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
Switching application
3
2
1
TO-220
3
1
D²PAK
TO-247
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STB9NK90Z
STF9NK90Z
STP9NK90Z
STW9NK90Z
Marking
B9NK90Z
F9NK90Z
P9NK90Z
W9NK90Z
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
July 2006
Rev 4
1/16
www.st.com
16
Page 1

Contents
Contents
STB9NK90Z - STF9NK90Z - STP9NK9w0wZw-.DSaTtWaS9heNeKt49U0.cZom
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/16
Page 2

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z
1 Electrical ratings
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Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20K)
Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt(3) Peak diode recovery voltage slope
VISO Insulation withstand voltage (DC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 200A/µs,VDD V(BR)DSS, Tj TJMAX
Value
TO-220/D²PAK/
TO-247
Unit
TO-220FP
900
900
± 30
8
5
32
160
1.28
4
4.5
--
8(1)
5(1)
32(1)
40
0.32
2500
V
V
V
A
A
A
W
W/°C
KV
V/ns
V
-55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
TO-220
D²PAK
TO-20FP
0.78 3.1
62.5
TO-247
0.78
50
Unit
°C/W
°C/W
300 °C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, VDD=50V)
Value
8
300
Unit
A
mJ
3/16
Page 3

Electrical characteristics
STB9NK90Z - STF9NK90Z - STP9NK9w0wZw-.DSaTtWaS9heNeKt49U0.cZom
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1mA, VGS= 0
VDS = Max rating,
VDS = Max rating @125°C
VGS = ±20V, VDS = 0
VDS= VGS, ID = 100µA
VGS= 10V, ID= 3.6A
900
3
3.75
1.1
1
50
±10
4.5
1.3
V
µA
µA
nA
V
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 3.6 A
5.75 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2115
190
40
pF
pF
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0V to 720V
115 pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=720V, ID = 8A
VGS =10V
(see Figure 19)
72 nC
14 nC
38 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
4/16
Page 4
Part Number W9NK90Z
Manufactur STMicroelectronics
Description Search -----> STW9NK90Z
Total Page 16 Pages
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