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VSB3200 Datasheet

High-Voltage Trench MOS Barrier Schottky Rectifier


VSB3200 Datasheet Preview


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New Product
VSB3200
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
200 V
IFSM
90 A
VF at IF = 3.0 A
0.63 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, dc-to-dc converters or
polarity protection application.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB3200
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) (1)
VRRM
IF(AV)
200
3.0
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
90
Voltage rate of change (rated VR)
dV/dt
10 000
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
UNIT
V
A
A
V/μs
°C
Document Number: 89144 For technical questions within your region, please contact one of the following:
Revision: 27-Sep-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
Page 1

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New Product
VSB3200
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage (1)
Reverse current per diode (2)
Typical juntion capacitance
IR = 1.0 mA
IF = 3.0 A
VR = 200 V
4.0 V, 1 MHz
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VBR 200 (minimum)
0.86
VF
0.63
1.6
IR
1.2
CJ 175
MAX.
-
1.20
0.71
60
9
-
UNIT
V
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB3200
Typical thermal resistance (1)
RθJA
RθJL
62
9
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSB3200-M3/54
1.08
54
VSB3200-M3/73
1.08
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.5
Resistive or Inductive Load
3.0
2.5
2.0
1.5
1.0
0.5
0.375" (9.5 mm) Lead Length
0
0 25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
2.4
D = 0.8
D = 0.3 D = 0.5
2.0
D = 0.2
1.6 D = 0.1
D = 1.0
1.2
T
0.8
0.4
0
0
D = tp/T
tp
0.5 1.0 1.5 2.0 2.5 3.0
Average Forward Current (A)
3.5
Fig. 2 - Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89144
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 27-Sep-10
Datasheet pdf - http://www.DataSheet4U.net/
Page 2

www.DataSheet.co.kr
New Product
VSB3200
Vishay General Semiconductor
10
TA = 150 °C
1 TA = 125 °C
0.1
TA = 100 °C
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (V)
1.2
Fig. 3 - Typical Instantaneous Forward Characteristics
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
100
Junction to Lead
10
0.001
TA = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Document Number: 89144 For technical questions within your region, please contact one of the following:
Revision: 27-Sep-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
Page 3
Part Number VSB3200
Manufactur Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Total Page 4 Pages
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