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Vishay Siliconix
Vishay Siliconix

TSFF5210 Datasheet

High Speed Infrared Emitting Diode


TSFF5210 Datasheet Preview


TSFF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
Description
TSFF5210 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
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94 8390
Features
• High modulation bandwidth (23 MHz)
• Extra high radiant power and radiant
intensity
• Low forward voltage
e2
• Suitable for high pulse current operation
• Standard T-1¾ (5 mm) package
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λp = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared video data transmission between Cam-
corder and TV set.
• Free air data transmission systems with high
modulation frequencies or high data transmission
rate requirements.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t 5 sec, 2 mm from case
Thermal resistance junction/
ambient
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
1
250
100
- 40 to + 85
- 40 to + 100
260
300
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81090
Rev. 1.5, 28-Nov-06
www.vishay.com
1
Page 1

TSFF5210
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Temp. coefficient of VF
Reverse current
Junction capacitance
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
Symbol
VF
VF
TKVF
IR
Cj
Optical Characteristics
www.DataShTeametb4=U.2c5om°C, unless otherwise specified
Parameter
Test condition
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
Temp. coefficient of φe
IF = 100 mA
Angle of half intensity
Peak wavelength
IF = 100 mA
Spectral bandwidth
IF = 100 mA
Temp. coefficient of λp
IF = 100 mA
Rise time
IF = 100 mA
Fall time
IF = 100 mA
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
Virtual source diameter
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Ie
Ie
φe
TKφe
ϕ
λp
Δλ
TKλp
tr
tf
fc
Min
Min
90
Typ.
1.5
2.3
- 2.1
125
Typ.
180
1800
50
- 0.35
± 10
870
40
0.25
15
15
23
3.7
Max Unit
1.8 V
3.0 V
mV/K
10 µA
pF
Max Unit
450 mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
300
250
200
150
R
thJA
100
50
0
0
16647
10 20 30 40 50 60 70 80 90 100
T - Ambient Temperature (°C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
200
175
150
125
100
75 R
thJA
50
25
0
0 10 20 30 40 50 60 70 80 90 100
16964
T - Ambient Temperature (°C)
amb
Figure 2. Forward Current vs. Ambient Temperature
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2
Document Number 81090
Rev. 1.5, 28-Nov-06
Page 2

1000
tP/T = 0.01
Tamb < 50°
0.02
0.05
0.1
0.2
0.5
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100
0.01
16031
0.1 1.0
10
tP - Pulse Duration (ms)
100
Figure 3. Pulse Forward Current vs. Pulse Duration
1000
100
tP = 100 µs
tP/T = 0.001
10
1
0
18873
1 23
VF - Forward Voltage (V)
4
Figure 4. Forward Current vs. Forward Voltage
1000
100
10
1
0.1
1
10 100 1000
16032
IF - Forward Current (mA)
Figure 5. Radiant Intensity vs. Forward Current
TSFF5210
Vishay Semiconductors
1.25
1.0
0.75
0.5
0.25
0
780
95 9886
880
λ - Wavelength (nm)
980
Figure 6. Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
70°
0.7
8
0.6 0.4 0.2 0 0.2 0.4 0.6
15989
Figure 7. Relative Radiant Intensity vs. Angular Displacement
1
0
-1
-2
-3
IFDC = 70 mA
- 4 IFAC = 30 mA pp
-5
10
14256
100 1000 10000 100000
f - Frequency (kHz)
Figure 8. Attenuation vs. Frequency
Document Number 81090
Rev. 1.5, 28-Nov-06
www.vishay.com
3
Page 3

TSFF5210
Vishay Semiconductors
Package Dimensions in mm
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15909
www.vishay.com
4
Document Number 81090
Rev. 1.5, 28-Nov-06
Page 4
Part Number TSFF5210
Manufactur Vishay Siliconix
Description High Speed Infrared Emitting Diode
Total Page 6 Pages
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