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Vishay Siliconix
Vishay Siliconix

TSFF5210 Datasheet

High Speed Infrared Emitting Diode


TSFF5210 Datasheet Preview


www.vishay.com
TSFF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
94 8390
DESCRIPTION
TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1 3/4
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
in
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
TSFF5210
Ie (mW/sr)
180
Note
• Test conditions see table “Basic Characteristics”
(deg)
± 10
p (nm)
870
tr (ns)
15
ORDERING INFORMATION
ORDERING CODE
TSFF5210
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 μs
tp = 100 μs
VR
IF
IFM
IFSM
PV
VALUE
5
100
200
1
180
UNIT
V
mA
mA
A
mW
Rev. 1.8, 24-Aug-11
1 Document Number: 81090
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 1

www.vishay.com
TSFF5210
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
°C
°C
°C
°C
K/W
200
180
160
140
120 RthJA = 230 K/W
100
80
60
40
20
0
0
21142
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21143
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
VF
VF
Temperature coefficient of VF
IF = 1 mA
TKVF
Reverse current
VR = 5 V
IR
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
Radiant power
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
Ie 120
Ie
e
Temperature coefficient of e
Angle of half intensity
IF = 100 mA
TKe
Peak wavelength
IF = 100 mA
p
Spectral bandwidth
Temperature coefficient of p
IF = 100 mA
IF = 100 mA

TKp
Rise time
IF = 100 mA
tr
Fall time
IF = 100 mA
tf
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
Virtual source diameter
d
TYP.
1.5
2.3
- 1.8
125
180
1800
50
- 0.35
± 10
870
40
0.25
15
15
24
3.7
MAX.
1.8
3.0
10
360
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.8, 24-Aug-11
2 Document Number: 81090
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 2

www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TSFF5210
Vishay Semiconductors
1000
tp/T = 0.01 Tamb < 50 °C
0.02
0.05
0.1
0.2
0.5
100
0.01
16031
0.1 1 10
tp - Pulse Duration (ms)
100
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
100
tp = 100 µs
tp/T = 0.001
10
1
0
18873
1 23
VF - Forward Voltage (V)
4
Fig. 4 - Forward Current vs. Forward Voltage
1000
100
10
1
0.1
1
16032
10 100 1000
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
1.25
1.0
0.75
0.5
0.25
0
780
95 9886
880
λ - Wavelength (nm)
980
Fig. 6 - Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
15989
0.6 0.4 0.2
0
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1
0
-1
-2
-3
IFDC = 70 mA
- 4 IFAC = 30 mA pp
-5
101
14256
102 103 104
f - Frequency (kHz)
105
Fig. 8 - Attenuation vs. Frequency
Rev. 1.8, 24-Aug-11
3 Document Number: 81090
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 3
Part Number TSFF5210
Manufactur Vishay Siliconix
Description High Speed Infrared Emitting Diode
Total Page 5 Pages
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