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Toshiba Semiconductor
Toshiba Semiconductor

TLP115A Datasheet

High Speed/ Long Distance Isolated Line Receiver Microprocessor System Interfaces Digital Isolation For A / D/ D / A Conversion


TLP115A Datasheet Preview


TOSHIBA Photocoupler GaAAs Ired & Photo-IC
TLP115A
High Speed, Long Distance Isolated Line Receiver
Microprocessor System Interfaces
Digital Isolation For A / D, D / A Conversion
ComputerPeripheral Interfaces
Ground Loop Elimination
TLP115A
Unit in mm
The TOSHIBA mini flat coupler TLP115A is a small outline coupler,
suitable for surface mount assembly.
TLP115A consists of a high output power GaAAs light emitting diode,
optically coupled to an integrated high gain, high speed shielded photo
detector whose output is an open collector schottky clamped transistor.
The shield, which shunts capacirively coupled common noise to ground,
provides a guaranteed transient immunity specification of 1000V / μs.
z Input current thresholds: IF = 5mA (max.)
z Switching speed: 10MBd (typ.)
z Common mode transient immunity: ± 1000V / μs (min.)
z Guaranteed performance over temp. : 0~70°C
z Isolation voltage: 2500Vrms (min.)
z UL recognized: UL1577, file no. E67349
Schematic
1
VF
3 Shield
ICC
VCC
6
IO
VO
5
GND
4
TOSHIBA
Weight: 0.09g
114C2
Pin Configuration (top view)
1 VCC 6
5
GND
34
1 : Anode
3 : Cathode
4 : GND
5 : VO(Output)
6 : VCC
Truth Table (positive logic)
Note. A 0.1μF bypass capacitor must be connected between pins 4 and 6.
Input
H
L
Output
L
H
1 2007-10-01
Page 1

Absolute Maximum Ratings (Ta = 25°C)
TLP115A
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Peak transient forward current
Reverse voltage
Output current
Output voltage
Supply voltage(1 minute maximum)
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature(10 sec.)
Isolation voltage(AC, 1 min., RH60%,
(Note 1)
(Note 2)
(Note 3)
Note 4)
IF
IFP
IFPT
VR
IO
VO
VCC
Po
Topr
Tstg
Tsol
BVS
20
40
1
5
25
7
7
40
40~85
55~125
260
2500
mA
mA
A
V
mA
V
V
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Derate 0.36mA / °C above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width. Derate 0.72mA / °C above 70°C.
(Note 3) Pulse width 1μs, 300pps.
Recommended Operating Conditions
Characteristic
Symbol
Min. Typ. Max. Unit
Input voltage, low level
Input current, high level
Supply voltage
Fan out (TTL load, each channel)
Operating temperature
VFL
IFH
VCC
N
Topr
3 0 1.0 V
6.3 8
20 mA
4.5 5 5.5 V
―― 8
0 70 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2 2007-10-01
Page 2

TLP115A
Electrical Characteristics (unless otherwise specified, Ta = 0~70°C, VCC = 4.5 ~ 5.5V,
VFL 1.0V)
Characteristic
Forward voltage
Forward voltage temperature coefficient
Reverse current
Capacitance between terminals
High level output voltage
Symbol
VF
VF / Ta
IR
CT
IOH
Low level output current
"H level outputL level output" input
current
High level supply current
Low level supply current
Input-output insulation leakage current
VOL
IFH
ICCH
ICCL
IS
Isolation resistance
RS
Stray capacitance between input to output
CS
* All typical values are VCC = 5V, Ta = 25°C.
Test Condition
Min. Typ.
IF = 10mA, Ta =25°C
IF = 10mA
VR = 3V, Ta = 25°C
VF = 0, f = 1MHz, Ta = 25°C
VF = 1.0, VO = 5.5V
VF = 1.0, VO = 5.5V, Ta = 25°C
IF = 5mA
IOL = 13mA (sinking)
IOL = 13mA (sinking)
VOL = 0.6V
VCC = 5.5V, IF = 0
VCC = 5.5V, IF = 10mA
VS = 3540V, t = 5s
Ta = 25°C
(Note 4)
1.2
R.H. 60%, VS = 500V DC
Ta = 25°C
(Note 4)
5×1010
VS = 0, f = 1MHz
Ta = 25°C
(Note 4)
1.4
2
30
0.5
0.4
7
12
1014
0.8
Max. Unit
1.7 V
mV / °C
10 μA
PF
250
μA
10
0.6 V
5 mA
15 mA
19 mA
100 μA
―Ω
PF
3 2007-10-01
Page 3

TLP115A
Switching Characteristics (VCC = 5V, Ta = 25°C)
Characteristic
Propagation delay time (HL)
Propagation delay time (LH)
Output rise fall time(1090%)
Common mode transient
immunity at high output
level
Common mode transient
immunity at low output
level
Symbol
tpHL
tpLH
tr , tf
CMH
CML
Test
Cir-
cuit
1
1
2
2
2
Test Condition
IF = 07.5mA
CL = 15pF, RL = 350
IF = 7.50mA
CL = 15pF, RL = 350
RL = 350, CL = 15pF
IF = 07.5mA
IF = 0 mA,
VCM = 400Vpp, VO(MIN)=2V
RL = 350
IF = 7.5 mA, VCM = 400Vpp
VO(MAX) = 0.8V,
RL = 350
Min. Typ. Max. Unit
60 120 ns
60 120 ns
30 ns
1000
V / μs
1000
V / μs
(Note 4) Device considered a twoterminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
(Note 5) The VCC supply voltage to each TLP115A isolator must be bypassed by 0.1μF capacitor. This can be
either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be
connected as close as possible to package VCC and GND pins of each device.
(Note 6) Maximum electrostatic discharge voltage for any pins: 180V(C = 200pF, R = 0)
4 2007-10-01
Page 4
Part Number TLP115A
Manufactur Toshiba Semiconductor
Description High Speed/ Long Distance Isolated Line Receiver Microprocessor System Interfaces Digital Isolation For A / D/ D / A Conversion
Total Page 8 Pages
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