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Diotec Semiconductor
Diotec Semiconductor

TIP121 Datasheet

Si-Epitaxial PlanarTransistors


TIP121 Datasheet Preview


TIP120, TIP121, TIP122
Darlington Transistors
NPN
Version 2004-06-21
1 = B1 2 = C2 3 = E2
Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren
NPN
Collector current – Kollektorstrom
5A
Plastic case
Kunststoffgehäuse
TO-220AB
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Collector-Emitter-voltage
B open
VCE0
Collector-Base-voltage
E open
VCB0
Emitter-Base-voltage
C open
VEB0
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
Ptot
with cooling – mit Kühlung
TC = 25°C Ptot
Collector current – Kollektorstrom (dc)
IC
Peak Collector current – Kollektor-Spitzenstrom ICM
Base current – Basisstrom (dc)
IB
Junction temperature – Sperrschichttemperatur Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25°C)
TIP120 TIP121 TIP122
60 V
80 V
100 V
60 V
80 V
100 V
50 V
2 W 1)
65 W
5A
8A
120 mA
- 65…+ 150°C
- 65…+ 150°C
Characteristics (Tj = 25°C)
Collector-Emitter cutoff current – Kollektorreststrom
IB = 0, VCE = 30 V
IB = 0, VCE = 40 V
IB = 0, VCE = 50 V
TIP120
TIP121
TIP123
ICE0
ICE0
ICE0
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 60 V
IE = 0, VCB = 80 V
IE = 0, VCB = 100 V
TIP120
TIP121
TIP122
ICB0
ICB0
ICB0
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– – 500 nA
– – 500 nA
– – 500 nA
– – 200 nA
– – 200 nA
– – 200 nA
1) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
1
Page 1

Darlington Transistors
TIP120, TIP121, TIP122
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
IEB0
Collector saturation voltage – Kollektor-Sättigungsspg. 1)
– 2 mA
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA
VCEsat
VCEsat
Base-Emitter on-voltage – Basis-Emitter-Spannung 1)
– 2V
– 4V
IC = 3 A, VCE = 3 V
VBEon
DC current gain – Kollektor-Basis-Stromverhältnis 1)
– 2.5 V
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A
hFE
hFE
Small signal current gain – Kleinsignal-Stromverstärkung
1000
1000
VCE = 4 V, IC = 3 A, f = 1 MHz
hfe 4 – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 100 kHz
CCB0
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
– 200 pF
RthA 62.5 K/W 2)
RthC 2 K/W
M 4 9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
TIP125, TIP126, TIP127
Equivalent Circuit – Ersatzschaltbild
B1
C2
T2
T1
E2
1) Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
2) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
Page 2
Part Number TIP121
Manufactur Diotec Semiconductor
Description Si-Epitaxial PlanarTransistors
Total Page 2 Pages
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