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Power Innovations Limited
Power Innovations Limited

TIC226M Datasheet

SILICON TRIACS


TIC226M Datasheet Preview


Copyright © 1997, Power Innovations Limited, UK
TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
q 8 A RMS, 70 A Peak
q Glass Passivated Wafer
q 400 V to 800 V Off-State Voltage
q Max IGT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC226D
Repetitive peak off-state voltage (see Note 1)
TIC226M
TIC226S
TIC226N
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width 200 µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
VALUE
400
600
700
800
8
70
80
±1
2.2
0.9
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
Repetitive peak
off-state current
VD = rated VDRM
IGTM
Peak gate trigger
current
VGTM
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
IG = 0
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
TC = 110°C
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
MIN TYP MAX UNIT
±2
2 50
-12 -50
-9 -50
20
0.7 2
-0.8 -2
-0.8 -2
0.9 2
mA
mA
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Page 1

TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
VTM
IH
IL
dv/dt
dv/dt(c)
Peak on-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of commu-
tation voltage
ITM = ±12 A
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = -12 V†
VDRM = Rated VDRM
VDRM = Rated VDRM
IG = 50 mA
IG = 0
IG = 0
(see Note 7)
IG = 0
ITRM = ±12 A
(see Note 6)
Init’ ITM = 100 mA
Init’ ITM = -100 mA
TC = 110°C
TC = 85°C
±1.6
5
-9
±2.1
30
-30
50
-50
±100
V
mA
mA
V/µs
±5 V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 , tp(g) = 20 µs, tr = 15 ns, f = 1 kHz.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.8 °C/W
62.5 °C/W
1000
100
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
TC01AA
Vsupply IGTM
++
+-
--
-+
VAA = ± 12 V
RL = 10
tp(g) = 20 µs
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC01AB
10
Vsupply IGTM
++
+-
--
-+
VAA = ± 12 V
RL = 10
tp(g) = 20 µs
10 1
1
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1.
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 2.
PRODUCT INFORMATION
2
Page 2

TYPICAL CHARACTERISTICS
TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
1000
100
HOLDING CURRENT
vs
CASE TEMPERATURE
TC01AD
Vsupply
+
-
VAA = ± 12 V
IG = 0
Initiating ITM = 100 mA
10
1
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 3.
1000
100
LATCHING CURRENT
vs
CASE TEMPERATURE
TC01AE
Vsupply IGTM
++
+-
--
-+
VAA = ± 12 V
10
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
TC01AC
10
1
0·1
QUADRANT 1
0·01
0·0001
0·001
0·01
IA = 0
TC = 25 °C
0·1
IGF - Gate Forward Current - A
Figure 4.
1
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
100
TI01AA
TC 85 °C
No Prior Device Conduction
10
Gate Control Guaranteed
1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 5.
1
1 10 100 1000
Consecutive 50-Hz Half-Sine-Wave Cycles
Figure 6.
PRODUCT INFORMATION
3
Page 3
Part Number TIC226M
Manufactur Power Innovations Limited
Description SILICON TRIACS
Total Page 6 Pages
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