TIC106M - SILICON CONTROLLED RECTIFIERSTIC106 SERIES SILICON CONTROLLED RECTIFIERS
Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997
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5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA
K A G
1 2 3 TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC106D Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) Surge on-state current (see Note 4) Peak positive gate current (pulse width ≤ 300 µs) Peak gate power dissipation (pulse width ≤ 300 µs) Average gate power dissipation (see Note 5) Operating case temperature range Stor
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