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Power Innovations Limited
Power Innovations Limited

TIC106M Datasheet

SILICON CONTROLLED RECTIFIERS


TIC106M Datasheet Preview


Copyright © 1997, Power Innovations Limited, UK
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
q 5 A Continuous On-State Current
q 30 A Surge-Current
q Glass Passivated Wafer
q 400 V to 800 V Off-State Voltage
q Max IGT of 200 µA
TO-220 PACKAGE
(TOP VIEW)
K1
A2
G3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIC106D
Repetitive peak off-state voltage (see Note 1)
TIC106M
TIC106S
TIC106N
TIC106D
Repetitive peak reverse voltage
TIC106M
TIC106S
TIC106N
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width 300 µs)
Peak gate power dissipation (pulse width 300 µs)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
VDRM
VRRM
IT(RMS)
IT(AV)
ITM
IGM
PGM
PG(AV)
TC
Tstg
TL
400
600
700
800
400
600
700
800
5
3.2
30
0.2
1.3
0.3
-40 to +110
-40 to +125
230
V
V
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Page 1

TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IDRM
IRRM
IGT
VGT
IH
VTM
dv/dt
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state
voltage
Critical rate of rise of
off-state voltage
VD = rated VDRM
VR = rated VRRM
VAA = 6 V
VAA = 6 V
tp(g) 20 µs
VAA = 6 V
tp(g) 20 µs
VAA = 6 V
tp(g) 20 µs
VAA = 6 V
Initiating IT = 10 mA
VAA = 6 V
Initiating IT = 10 mA
ITM = 5 A
VD = rated VD
RGK = 1 k
IG = 0
RL = 100
RL = 100
RGK = 1 k
RL = 100
RGK = 1 k
RL = 100
RGK = 1 k
RGK = 1 k
RGK = 1 k
(See Note 6)
RGK = 1 k
TC = 110°C
TC = 110°C
tp(g) 20 µs
TC = - 40°C
TC = 110°C
TC = - 40°C
TC = 110°C
400 µA
1 mA
60 200
µA
1.2
0.4 0.6
1
V
0.2
8
mA
5
1.7 V
10 V/µs
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.5 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
Gate-controlled
tgt turn-on time
Circuit-commutated
tq turn-off time
IT = 5 A
IT = 5 A
IRM = 8 A
TEST CONDITIONS
IG = 10 mA
IG = 10 mA
See Figure 1
See Figure 2
MIN TYP MAX UNIT
1.75 µs
7.7 µs
PRODUCT INFORMATION
2
Page 2

TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
30 V
6 IT
RG
G
VG IG
VA
DUT
VG
10%
tgt
VA
90%
Figure 1. Gate-controlled turn-on time
PMC1AA
G1
VG1
30 V
0.1 µF
6 to 0.5 µF
IA
RG
IG
0.1
VA
DUT
VK
(IRM Monitor)
R2
R1
TH1
RG
IG VG2
NOTES: A. Resistor R1 is adjusted for the specified value
of IRM.
B. Resistor R2 value is 30/IH, where IH is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
G2 tP = 50 µs to 300 µs
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, VG, of 20 V and duration of
10 µs to 20 µs.
G2 tP Synchronisation
VG1
VG2
IA
VA
IT
tP
0
IRM
VT
0
tq
Figure 2. Circuit-commutated turn-off time
PMC1AB
PRODUCT INFORMATION
3
Page 3

TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
AVERAGE ANODE ON-STATE CURRENT
DERATING CURVE
TI20AA
6
Continuous DC
5
MAX CONTINUOUS ANODE POWER DISSIPATED
vs
CONTINUOUS ON-STATE CURRENT
100
TI20AB
TJ = 110°C
4
Φ = 180º
3
10
2
0° 180°
1Φ
Conduction
Angle
0
30 40 50 60 70 80 90 100 110
TC - Case Temperature - °C
Figure 3.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
100
TI20AC
TC 80 °C
No Prior Device Conduction
Gate Control Guaranteed
1
1 10 100
IT - Continuous On-State Current - A
Figure 4.
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
TI20AD
10
10 1
1
1 10 100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 5.
0·1
1
10 100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 6.
PRODUCT INFORMATION
4
Page 4
Part Number TIC106M
Manufactur Power Innovations Limited
Description SILICON CONTROLLED RECTIFIERS
Total Page 8 Pages
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