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Toshiba
Toshiba

TC58NVG6D2GTA00 Datasheet

64 GBIT (8G X 8 BIT) CMOS NAND E2PROM


TC58NVG6D2GTA00 Datasheet Preview


TOSHIBA CONFIDENTIAL TC58NVG6D2GTA00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64 GBIT (8G 8 BIT) CMOS NAND E2PROM (Multi-Level-Cell)
DESCRIPTION
The TC58NVG6D2 is a single 3.3 V 64 Gbit (74,594,648,064 bits) NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as (8192 + 640) bytes 256 pages 4124 blocks.
The device has two 8832-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 8832-byte increments. The Erase operation is implemented in a single block
unit (2 Mbytes 160 Kbytes: 8832 bytes 256 pages).
The TC58NVG6D2 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell array
Register
Page size
Block size
TC58NVG6D2G
8832 512K 8
8832 8
8832 bytes
(2M 160 K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 3996 blocks
Max 4124 blocks
Power supply
VCC 2.7 V to 3.6 V
Access time
Cell array to register 200 s max
Serial Read Cycle
25 ns min
Program/Erase time
Auto Page Program
Auto Block Erase
1400 s/page typ.
5 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
TBD ( 30 mA max.)
TBD ( 30 mA max.)
TBD ( 30 mA max.)
50 A max
Package
(Weight: TBD g typ.)
FOR RELIABILITY GUIDANCE, PLEASE REFER TO THE APPLICATION NOTES AND COMMENTS (17).
1 2010-08-02C
Free Datasheet http://www.datasheet4u.com/
Page 1

TOSHIBA CONFIDENTIAL
PIN ASSIGNMENT (TOP VIEW)
TC58NVG6D2GTA00
8
Vcc
Vss
NC
NC
NC
NC
RY / BY
RE
CE
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
Vss
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
TC58NVG6D2GTA00
8
48 Vss
47 NC
46 NC
45 NC
44 I/O8
43 I/O7
42 I/O6
41 I/O5
40 NC
39 NC
38 Vcc
37 VCC
36 VSS
35 NC
34 Vcc
33 NC
32 I/O4
31 I/O3
30 I/O2
29 I/O1
28 NC
27 NC
26 NC
25 Vss
PIN NAMES
I/O1 ~ I/O8
CE
WE
RE
CLE
ALE
WP
RY/BY
VCC
VSS
N.C
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Power supply
Ground
No connection
2 2010-08-02C
Free Datasheet http://www.datasheet4u.com/
Page 2

BLOCK DIAGRAM
TOSHIBA CONFIDENTIAL TC58NVG6D2GTA00
Status register
VCC VSS
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
I/O
Control circuit
Logic control
Address register
Command register
Control circuit
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
RY / BY
RY / BY
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC
VIN
VI/O
PD
TSOLDER
TSTG
TOPR
Power Supply Voltage
Input Voltage
Input /Output Voltage
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
VALUE
0.6 to 4.6
0.6 to 4.6
0.6 V to VCC 0.3 V (4.6 V)
0.3
260
-55 to 150
0 to 70
CAPACITANCE *(Ta 25°C, f 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN 0 V
COUT
Output
VOUT 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN

MAX
10
10
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
3 2010-08-02C
Free Datasheet http://www.datasheet4u.com/
Page 3

TOSHIBA CONFIDENTIAL TC58NVG6D2GTA00
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
3996
4124
Blocks
NOTE:
The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
The specification for the minimum number of valid blocks is applicable over the device lifetime.
* The number of valid blocks includes extended blocks.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC Power Supply Voltage
2.7 V
3.6 V
V
VIH High Level input Voltage 2.7 V VCC 3.6 V
0.8 x Vcc
VCC 0.3
V
VIL Low Level Input Voltage 2.7 V VCC 3.6 V
* 2 V (pulse width lower than 20 ns)
0.3*
0.2 x Vcc
V
DC CHARACTERISTICS (Ta 0 to 70, VCC 2.7 V to 3.6 V)
SYMBOL
PARAMETER
CONDITION
IIL
ILO
ICCO0*1
ICCO1*2
ICCO2*2
Input Leakage Current
Output Leakage Current
Power On Reset Current
Serial Read Current(Single page)
VIN 0 V to VCC
VOUT 0 V to VCC
CE VIL
CE VIL, IOUT 0 mA, tcycle 25 ns
Serial Read Current( Multi-page )
Programming Current( Single page )
CE VIL, IOUT 0 mA, tcycle 25 ns
Programming current( Multi-page )
ICCO3
Single Block Erasing current
Multi-block Erasing current
ICCS
VOH
VOL
IOL
( RY / BY )
Standby Current
High Level Output Voltage
Low Level Output Voltage
Output current of RY / BY pin
CE VCC 0.2 V, WP 0 V/VCC,
IOH  0.4 mA (2.7 V VCC 3.6 V)
IOL 2.1 mA (2.7 V VCC 3.6 V)
VOL 0.4 V (2.7 V VCC 3.6 V)
*1: Icco0 is the average current during R/B signal=”Busy” state.
*2: All operation current are without data cache.
MIN TYP. MAX UNIT
  10 A
  10 A
  TBD mA
  TBD mA
  TBD mA
  TBD mA
  TBD mA
  TBD mA
  TBD mA
  50 A
2.4   V
  0.4 V
8 mA
4 2010-08-02C
Free Datasheet http://www.datasheet4u.com/
Page 4
Part Number TC58NVG6D2GTA00
Manufactur Toshiba
Description 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
Total Page 17 Pages
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