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ST Microelectronics
ST Microelectronics

ST2310DHI Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR


ST2310DHI Datasheet Preview


® ST2310DHI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s NEW SERIES, ENHANCED PERFORMANCE
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s INTEGRATED FREE WHEELING DIODE
s HIGH VOLTAGE CAPABILITY (> 1500 V)
s HIGH SWITCHING SPEED
s TIGTHER hfe CONTROL
s IMPROVED RUGGEDNESS
APPLICATIONS:
s HORIZONTAL DEFLECTION HIGH END TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
RBE =32
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
Ptot
Visol
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Total Dissipation at Tc = 25 oC
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
April 2003
Value
1500
600
7
12
25
7
55
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
oC
oC
1/6
Page 1

ST2310DHI
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.3 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
TJ = 125 oC
IEBO
V(BR)EBO
VCE(sat)
Emitter Cut-off Current
(IC = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 4 V
IE = 800 mA
IC = 7 A
IB = 1.75 A
VBE(sat)Base-Emitter
Saturation Voltage
IC = 7 A
IB = 1.75 A
hFEDC Current Gain
IC = 1 A
IC = 7 A
IC = 7 A
VCE = 5 V
VCE = 1 V
VCE = 5 V
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
IC = 5 A
IB(on) = 0.9 A
LBB(off) = 1.9 µH
Vf Diode Forward Voltage IC = 7 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
f = 32 KHz
VBE(off) = -2.5 V
(see figure 1)
Min. Typ.
70
7
15
5
5.5
2
0.25
1.5
Max.
1
2
210
3
1.1
8.5
2.5
0.5
2.2
Unit
mA
mA
mA
V
V
V
µs
µs
V
Safe Operating Area
Thermal Impedance
2/6
Page 2

Derating Curve
Output Characteristics
ST2310DHI
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
DC Current Gain
3/6
Page 3
Part Number ST2310DHI
Manufactur ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Total Page 6 Pages
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