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Vishay Siliconix
Vishay Siliconix

SI4946EY Datasheet

Dual N-Channel 60-V (D-S)/ 175C MOSFET


SI4946EY Datasheet Preview


Si4946EY
Vishay Siliconix
Dual N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
60
rDS(on) (W)
0.055 @ VGS = 10 V
0.075 @ VGS = 4.5 V
ID (A)
4.5
3.9
SO-8
D
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4946EY
Si4946EY-T1 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
60
"20
4.5
3.8
30
2
2.4
1.7
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70157
S-03950—Rev. D, 26-May-03
Symbol
RthJA
Limit
62.5
Unit
_C/W
www.vishay.com
2-1
Page 1

Si4946EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 4.5 A
VGS = 4.5 V, ID = 3.9 A
VDS = 15 V, ID = 4.5 A
IS = 2 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 30 V, VGS = 10 V, ID = 4.5 A
VDD = 30 V, RL = 30 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2 A, di/dt = 100 A/ms
Min Typa Max Unit
1V
"100
nA
2
mA
25
20 A
0.045
0.055
0.055
0.075
W
13 S
0.9 1.2 V
19 30
4 nC
3
1 3.6 W
13 20
11 20
36 60 ns
11 20
35 60
www.vishay.com
2-2
Document Number: 70157
S-03950—Rev. D, 26-May-03
Page 2

Si4946EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
VGS = 10 thru 5 V
24
24
4V
18 18
Transfer Characteristics
TC = - 55_C
25_C
150_C
12 12
6
0
0
0.150
3V
1234
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
0.125
0.100
0.075
0.050
0.025
VGS = 4.5 V
VGS = 10 V
0.000
0
6 12 18
ID - Drain Current (A)
Gate Charge
10
VDS = 30 V
ID = 4.5 A
8
24
30
6
4
2
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
6
0
0
1400
12345
VGS - Gate-to-Source Voltage (V)
Capacitance
6
1200
1000
800
Ciss
600
400
200
Crss
Coss
0
0 12 24 36 48 60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
VGS = 10 V
1.9 ID = 4.5 A
1.6
1.3
1.0
0.7
0.4
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
Document Number: 70157
S-03950—Rev. D, 26-May-03
www.vishay.com
2-3
Page 3

Si4946EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
10
0.06
ID = 4.5 A
TJ = 175_C
TJ = 25_C
0.04
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.2
- 0.0
ID = 250 µA
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (_C)
0.00
0
50
40
2468
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
10
30
20
10
0
0.01
0.1 1
Time (sec)
10 30
2
1 Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
www.vishay.com
2-4
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
1 10 30
Document Number: 70157
S-03950—Rev. D, 26-May-03
Page 4
Part Number SI4946EY
Manufactur Vishay Siliconix
Description Dual N-Channel 60-V (D-S)/ 175C MOSFET
Total Page 4 Pages
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