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SiGe Semiconductor
SiGe Semiconductor

SE2527L Datasheet

2.4 GHz Power Amplifier


SE2527L Datasheet Preview


SE2527Lwww.DataSheet4U.com
2.4 GHz Power Amplifier with Power Detector
Preliminary Information
Applications
ƒ DSSS 2.4 GHz WLAN (IEEE802.11b)
ƒ OFDM 2.4 GHz WLAN (IEEE802.11g)
ƒ Access Points, PCMCIA, PC cards
Features
ƒ Single 3.3 V Supply Operation
o 21 dBm, EVM = 3 %, 802.11g, OFDM 54
Mbps
o 24 dBm, ACPR < -32 dBc, 802.11b
ƒ Dual Supply Operation
o 23 dBm, EVM = 3 %, 802.11g, OFDM 54
Mbps
o 25 dBm, ACPR < -32 dBc, 802.11b
ƒ 32 dB Gain
ƒ Pin for pin compatible to the SE2525L
ƒ Integrated temperature compensated power
detector
ƒ Integrated power amplifier enable pin (VEN)
ƒ Lead Free and RoHS compliant
ƒ Small package: 16 pin 4 mm x 4 mm x 0.9 mm
QFN
Ordering Information
Part Number
SE2527L
SE2527L-R
SE2527L-AK1
Package
16 Pin QFN
16 Pin QFN
Application Kit
Functional Block Diagram
Remark
Samples
Tape and Reel
Standard
Product Description
The SE2527L is a 2.4 GHz power amplifier designed
for use in the 2.4 GHz ISM band for wireless LAN
applications. The device incorporates a power
detector for closed loop monitoring of the output
power.
The SE2527L also offers a high power mode by
operating at 5 V. This provides an extra 2 dB of
improved EVM performance.
The SE2527L includes a digital enable control for
device on/off control.
The device is pin for pin compatible to SiGe’s
SE2524L, allowing both devices to share the same
application board with only a few component changes
required. This provides users with both a high and
low power solution without changing the layout.
The SE2527L temperature compensated power
detector is highly immune to mismatch at its output
with less than 1.5 dB of variation with a 2:1 mismatch.
V EN
V CC0
Bias Generator
IN Stage 1 Stage 2
Stage 3
OUT/V CC3
Detector
V CC1
V CC2
V DET OUT
Figure 1: Functional Block Diagram
157-DST-01 ƒ Rev 1.2 ƒ Apr-12-2006
1 of 12
Page 1

Pin Out Diagram
SE2527L
TopView
SE2527Lwww.DataSheet4U.com
2.4 GHz Power Amplifier with Power Detector
Preliminary Information
SE2527L
Bottom View
IN 1
V EN 2
GND 3
V CC0 4
DiePad
12 GND
11 OUT / V CC3
10 GND
9 GND
GND 12
OUT / VCC3 11
GND 10
GND 9
DiePad
1 IN
2 V EN
3 GND
4 V CC0
Pin Out Description
Pin No.
1
2
3
4
5
6
7
8
9 -10
11
12
13
14
15
16
Die Pad
Name
IN
VEN
GND
VCC0
GND
GND
VDET OUT
GND
GND
OUT/ VCC3
GND
VCC2
N/C
VCC1
GND
GND
Figure 2: SE2527L Pin-Out Diagram
Description
Power amplifier RF input; DC block required
Digital pin used to power up and power down the IC
Ground
Bias/control circuit supply voltage
Ground
Ground
Analog power detector output
Ground
Ground
Power Amplifier RF output and Stage 3 collector supply voltage
Ground
Stage 2 collector supply
No Connect (This pin should NOT be connected to GND or VCC)
Stage 1 collector supply
Ground
Exposed die pad; electrical and thermal ground
157-DST-01 ƒ Rev 1.2 ƒ Apr-12-2006
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Page 2

SE2527Lwww.DataSheet4U.com
2.4 GHz Power Amplifier with Power Detector
Preliminary Information
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings for a long period of time may
cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the
recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this
device should be at ESD protected workstations.
Symbol
VCC
VCC3
VEN
IN
TSTG
Tj
Definition
Supply Voltage on pins VCC0, VCC1, and VCC2
Supply Voltage on pins VCC3 (Note: SE2527L
application circuit must be followed for operation
above 3.6 V)
Power Amplifier Enable
RF Input Power
Storage Temperature Range
Maximum Junction Temperature
Recommended Operating Conditions
Symbol
VCC
VCC3
TA
Parameter
Supply Voltage on pins VCC0, VCC1, VCC2
Supply Voltage on pins VCC3 (Note: SE2527L
application circuit must be followed for operation
above 3.6 V)
Ambient Temperature
Min.
-0.3
-0.3
-0.3
-
-40
-
Max.
4
5.5
VCC0 + 0.3
2
150
150
Unit
V
V
V
dBm
°C
°C
Min.
2.9
2.9
-20
Max.
3.6
5.5
85
Unit
V
V
°C
DC Electrical Characteristics
Conditions: VCC = VCC3 = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2527L-EV1 evaluation
board, unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
ICC-802.11b
Supply Current
(Sum of VCC0,
VCC1, VCC2, VCC3)
POUT = 24 dBm, 11 Mbps CCK
signal, BT = 0.45, VCC = VCC3 = 3.3 V
POUT = 25 dBm, 11 Mbps CCK
signal, BT = 0.45, VCC = 3.3 V, VCC3
= 5.0 V
-
-
300 - mA
375 475 mA
ICC-802.11g
Supply Current
(Sum of VCC0,
VCC1, VCC2, VCC3)
POUT = 21 dBm, 54 Mbps OFDM
signal, 64 QAM, VCC = VCC3 = 3.3 V
POUT = 23 dBm, 54 Mbps OFDM
signal, 64 QAM, VCC = 3.3 V, VCC3 =
5.0 V
-
-
230 - mA
290 340 mA
IOFF Supply Current
VEN = 0 V, No RF
- 3 10 μA
VENH Logic High Voltage
-
1.3
-
VCC
V
VENL
Logic Low Voltage
-
0 - 0.5 V
157-DST-01 ƒ Rev 1.2 ƒ Apr-12-2006
3 of 12
Page 3

SE2527Lwww.DataSheet4U.com
2.4 GHz Power Amplifier with Power Detector
Preliminary Information
AC Electrical Characteristics
802.11b/g AC Electrical Characteristics (3.3 V)
Conditions: VCC = VCC3 = VEN = 3.3 V, f = 2.45 GHz, TA = 25 °C, as measured on SiGe Semiconductor’s SE2527L-
EV1 evaluation board, unless otherwise noted
Symbol
Parameter
Conditions
Min. Typ. Max.
Unit
fL-U
P1dB
S21
ΔS21
ACPR
2f
3f
EVM
tr, tf
STAB
VSWR
Frequency Range
Output 1dB compression point
Small Signal Gain
Gain Variation over band
Adjacent Channel Power Ratio
±11 MHz offsets from carrier
±22 MHz offsets from carrier
-
No modulation
PIN = -25 dBm
PIN = -25 dBm,
fIN= 2400 to 2500 MHz
POUT = 24 dBm, 11
Mbps CCK signal, BT =
0.45
Harmonic
POUT = 24 dBm, CW
Error Vector Magnitude
Rise and Fall Time
Stability
Tolerance to output load
mismatching
POUT = 21 dBm, 54
Mbps OFDM signal, 64
QAM
-
POUT = 24 dBm, 54
Mbps OFDM signal, 64
QAM VSWR = 6:1 All
Phases
POUT = 24 dBm, 54
Mbps OFDM signal, 64
QAM VSWR = 10:1 All
Phases
2400 - 2500
24.5 26.5
-
29 33 36
-1-
MHz
dBm
dB
dB
- -37 -
- -60 -
dBc
- -40 - dBm/MHz
- -40 - dBm/MHz
- 3.0 -
%
- 0.5 -
µSec
All non-harmonically related outputs less
than -50 dBc/100 kHz
No damage
157-DST-01 ƒ Rev 1.2 ƒ Apr-12-2006
4 of 12
Page 4
Part Number SE2527L
Manufactur SiGe Semiconductor
Description 2.4 GHz Power Amplifier
Total Page 12 Pages
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