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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RD100HHF1 Datasheet

MOS FET


RD100HHF1 Datasheet Preview


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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
3
5.0+/-0.3
18.5+/-0.3
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50
ID Drain current
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
50
+/-20
176.5
12.5
25
175
-40 to +175
0.85
UNIT
V
V
W
W
A
°C
°C
°C/W
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current VGS=10V, VDS=0V
--1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.5 - 4.5
Pout Output power
f=30MHz ,VDD=12.5V
100 110
-
ηD Drain efficiency
Pin=7W, Idq=1.0A
55 60
-
Load VSWR tolerance
VDD=15.2V,Po=100W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD100HHF1
MITSUBISHI ELECTRIC
1/7
REV.3 8 APRIL. 2004
Datasheet pdf - http://www.DataSheet4U.net/
Page 1

www.DataSheet.co.kr
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
200 AMBIENT TEMPERATURE
160
120
80
40
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
4
2
0
01234567
Vgs(V)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
Vgs=6V
Vgs=5.7V
6
Vgs=5.4V
4 Vgs=5.1V
2 Vgs=4.8V
Vgs=4.5V
0 Vgs=4.2V
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
300
250
200
Ta=+25°C
f=1MHz
150
100
50
0
0 10 20 30
Vds(V)
Vds VS. Coss CHARACTERISTICS
500
400
Ta=+25°C
f=1MHz
300
200
100
0
0 10 20 30
Vds(V)
Vds VS. Crss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
10
0
0 10 20 30
Vds(V)
RD100HHF1
MITSUBISHI ELECTRIC
2/7
REV.3 8 APRIL. 2004
Datasheet pdf - http://www.DataSheet4U.net/
Page 2

www.DataSheet.co.kr
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
Ta=+25°C
f=30MHz
Vdd=12.5V
40 Idq=1A
Po
30
Gp
20
100
80
η
60
40
10
0
0
Idd
10 20 30
Pin(dBm)
20
0
40
Pin-Po CHARACTERISTICS
120
80
100 Po
80
70
ηd
60
60 50
Ta=25°C
40
f=30MHz
40
Vdd=12.5V
20 Idd Idq=1A 30
0 20
0 2 4 6 8 10
Pin(W)
Vdd-Po CHARACTERISTICS
140
120
100
80
Ta=25°C
f=30MHz
Pin=7W
Idq=1A
Zg=ZI=50 ohm
60
40
20
0
46
8 10
Vdd(V)
28
26
24
Po 22
20
18
16
Idd
14
12
10
8
6
4
2
0
12 14
Vgs-Ids CHARACTERISTICS 2 +25°C
10
Vds=10V
8 Tc=-25~+75°C
6
4 +75°C
2 -25°C
0
01234567
Vgs(V)
RD100HHF1
MITSUBISHI ELECTRIC
3/7
REV.3 8 APRIL. 2004
Datasheet pdf - http://www.DataSheet4U.net/
Page 3

www.DataSheet.co.kr
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
TEST CIRCUIT(f=30MHz)
Vgg
Vdd
0-50pF
RF-IN
C3
82/220pF
L2 330uF,50V
C1 2.7kOHM*2
220/56pF
20kOHM
L3 4.7OHM*2
C2
L1
72/72/82pF
100OHM
L4 C4
0-50pF
110pF
270pF
220/56pF
0-110pF
30/30pF
RF-OUT
14
35
44
47
60
82
84
86
90
100
C1:330pF*3,0.022uF in parallel
C2:33uF*2,220pF in parallel
C3:68pF,82pF in parallel
C4:15pF,18pF in parallel
4.5
12
20
35
50
52
54
87
100
12
8
14
L1:7Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire
L2:10Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire
L3:4Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire
L4:3Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire
Dimensions:mm
Note:Board material-teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
RD100HHF1
MITSUBISHI ELECTRIC
4/7
REV.3 8 APRIL. 2004
Datasheet pdf - http://www.DataSheet4U.net/
Page 4
Part Number RD100HHF1
Manufactur Mitsubishi Electric Semiconductor
Description MOS FET
Total Page 7 Pages
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