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P6NK60ZFP Datasheet

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STB6NK60Z - STB6NK60Z-1
STP6NK60ZFP - STP6NK60Z
N-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK
Zener-Protected SuperMESH™ Power MOSFET
Features
Type
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
STP6NK60Z
VDSS
600 V
600 V
600 V
600 V
RDS(on) ID
PW
< 1.2 6 A 110 W
< 1.2 6 A 110 W
< 1.2 6 A 30 W
< 1.2 6 A 110 W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
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3
2
1
TO-220
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB6NK60Z
B6NK60Z
STB6NK60Z-1
B6NK60Z
STP6NK60ZFP
P6NK60ZFP
STP6NK60Z
P6NK60Z
Package
D²PAK
I²PAK
TO-220FP
TO-220
November 2007
Rev 8
Packaging
Tape & reel
Tube
Tube
Tube
1/17
www.st.com
17
Page 1

Contents
Contents
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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2/17
Page 2

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
VESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ)
dv/dt(3) Peak diode recovery voltage slope
VISO Insulation withstand voltage (DC)
Tj Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 6 A, di/dt 200 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
www.DataSheet4U.com Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Tl
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220/D²/I²PAK TO-220FP
600 V
± 30
V
6
6 (1)
A
3.8
3.8 (1)
A
24
24 (1)
A
110 30 W
0.88 0.24 W/°C
3500
V
4.5 V/ns
--
2500
V
-55 to 150
°C
Value
Unit
TO-220/D²/I²PAK TO-220FP
1.14 4.2 °C/W
62.5 °C/W
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting TJ= 25 °C, ID= IAR, VDD= 50 V)
Value
6
210
Unit
A
mJ
3/17
Page 3

Electrical characteristics
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1 mA, VGS = 0
600
VDS = Max rating
VDS = Max rating, TC = 125 °C
V
1 µA
50 µA
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 3 A
±10 µA
3 3.75 4.5
1 1.2
V
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS = 8 V, ID = 3 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
5S
pF
905
pF
115
pF
25
Coss
(2)
eq .
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
56 pF
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Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 6 A,
VGS = 10 V
(see Figure 18)
33 46 nC
6 nC
17 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17
Page 4
Part Number P6NK60ZFP
Manufactur STMicroelectronics
Description Search -----> STP6NK60ZFP
Total Page 17 Pages
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