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ST Microelectronics
ST Microelectronics

P60N05 Datasheet

N-CHANNEL Power MOSFET


P60N05 Datasheet Preview


TYPE
STP60N05-14
STP60N06-14
STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
VDSS
50 V
60 V
RDS(on)
< 0.014
< 0.014
ID
60 A
60 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.012
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s VERY LOW RDS (on)
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-Source Voltage (Vgs = 0)
VDGR Drain-Gate Voltage (Rgs = 20 K)
VGS Gate-Source Voltage
ID Drain-Current (continuous) at Tc = 25oC
ID Drain-Current (continuous) at Tc = 100oC
IDM() Drain-Current (Pulsed)
Ptot Total Dissipation at Tc = 25oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max Operating Junction Temperature
()Pulse width limited by safe operating area
March 1996
Value
STP60N05-14
STP60N06-14
50 60
50 60
± 20
60
50
240
150
1
-
-65 to 175
175
Unit
V
V
V
A
A
A
W/oC
oC
V
oC
oC
1/5
Page 1

STP60N05-14/STP60N06-14
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
60
600
150
50
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA
VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
250
1000
100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 30 A
Resistance
VGS = 10 V ID = 30 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
60
Typ.
3
0.012
Max.
4
0.014
0.028
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 30 A
Min.
20
Typ.
30
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
3900
950
250
4800
1200
320
pF
pF
pF
2/5
Page 2

STP60N05-14/STP60N06-14
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 25 V
RG = 4.7
ID = 30 A
VGS = 10 V
VDD = 40 V
RG = 47
VDD = 40 V
ID = 60 A
ID = 60 A
VGS = 10 V
VGS = 10 V
Min.
Typ.
30
180
210
130
26
55
Max.
50
250
170
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V
RG = 4.7
ID = 60 A
VGS = 10 V
Min.
Typ.
35
135
180
Max.
50
190
250
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 60 A
VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 60 A
VDD = 30 V
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
150
0.56
9
Max.
60
240
1.6
Unit
A
A
V
ns
µC
A
3/5
Page 3
Part Number P60N05
Manufactur ST Microelectronics
Description N-CHANNEL Power MOSFET
Total Page 5 Pages
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