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ST Microelectronics
ST Microelectronics

P60N05 Datasheet

N-CHANNEL Power MOSFET


P60N05 Datasheet Preview


TYPE
STP60N05-14
STP60N06-14
STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
VDSS
50 V
60 V
RDS(on)
< 0.014
< 0.014
ID
60 A
60 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.012
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s VERY LOW RDS (on)
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-Source Voltage (Vgs = 0)
VDGR Drain-Gate Voltage (Rgs = 20 K)
VGS Gate-Source Voltage
ID Drain-Current (continuous) at Tc = 25oC
ID Drain-Current (continuous) at Tc = 100oC
IDM() Drain-Current (Pulsed)
Ptot Total Dissipation at Tc = 25oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max Operating Junction Temperature
()Pulse width limited by safe operating area
March 1996
Value
STP60N05-14
STP60N06-14
50 60
50 60
± 20
60
50
240
150
1
-
-65 to 175
175
Unit
V
V
V
A
A
A
W/oC
oC
V
oC
oC
1/5
Page 1

STP60N05-14/STP60N06-14
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
60
600
150
50
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA
VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
250
1000
100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 30 A
Resistance
VGS = 10 V ID = 30 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
60
Typ.
3
0.012
Max.
4
0.014
0.028
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 30 A
Min.
20
Typ.
30
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
3900
950
250
4800
1200
320
pF
pF
pF
2/5
Page 2

STP60N05-14/STP60N06-14
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 25 V
RG = 4.7
ID = 30 A
VGS = 10 V
VDD = 40 V
RG = 47
VDD = 40 V
ID = 60 A
ID = 60 A
VGS = 10 V
VGS = 10 V
Min.
Typ.
30
180
210
130
26
55
Max.
50
250
170
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V
RG = 4.7
ID = 60 A
VGS = 10 V
Min.
Typ.
35
135
180
Max.
50
190
250
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 60 A
VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 60 A
VDD = 30 V
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
150
0.56
9
Max.
60
240
1.6
Unit
A
A
V
ns
µC
A
3/5
Page 3

STP60N05-14/STP60N06-14
DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
inch
TYP.
0.050
0.645
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
4/5
Page 4
Part Number P60N05
Manufactur ST Microelectronics
Description N-CHANNEL Power MOSFET
Total Page 5 Pages
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