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ON Semiconductor
ON Semiconductor

MTP23P06V Datasheet

Power MOSFET 23 Amps


MTP23P06V Datasheet Preview


MTP23P06V
Preferred Device
Power MOSFET
23 Amps, 60 Volts
P–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp 10 ms)
Drain Current – Continuous @ 25°C
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp 10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 15
± 25
23
15
81
90
0.60
Operating and Storage Temperature
Range
TJ, Tstg –55 to
175
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 23 Apk, L = 3.0 mH, RG = 25 )
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from Case for 10
seconds
EAS
RθJC
RθJA
TL
794
1.67
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
23 AMPERES
60 VOLTS
RDS(on) = 120 m
P–Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4 Drain
1
2
3
TO–220AB
CASE 221A
STYLE 5
MTP23P06V
LLYWW
1
Gate
3
Source
2
Drain
MTP23P06V
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP23P06V
TO–220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MTP23P06V/D
Page 1

MTP23P06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
60.5
– Vdc
– mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
µAdc
– – 10
– – 100
IGSS – – 100 nAdc
VGS(th)
2.0 2.8 4.0 Vdc
– 5.3 – mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 11.5 Adc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 23 Adc)
(VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150°C)
Forward Transconductance
(VDS = 10.9 Vdc, ID = 11.5 Adc)
RDS(on)
VDS(on)
gFS
– 0.093 0.12 Ohm
Vdc
– – 3.3
– – 3.2
5.0 11.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 23 Adc,
VGS = 10 Vdc,
RG = 9.1 )
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 23 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 23 Adc, VGS = 0 Vdc)
(IS = 23 Adc, VGS = 0 Vdc, TJ = 150°C)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
1160
1620
pF
– 380 530
– 105 210
– 13.8 30 ns
– 98.3 200
– 41 80
– 62 120
– 38 50 nC
– 7.0 –
– 18 –
– 14 –
Vdc
– 2.2 3.5
– 1.8 –
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 23 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
– 142.2 –
– 100.5 –
– 41.7 –
– 0.804 –
ns
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
LD nH
– 3.5 –
4.5
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
LS
– 7.5 – nH
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2
Page 2

MTP23P06V
TYPICAL ELECTRICAL CHARACTERISTICS
50
TJ = 25°C
40
30
VGS = 10V
9V
20
8V
7V
6V
10 5 V
4V
0
0 2 4 6 8 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
40
VDS 10 V
35
30
25
TJ = -55°C
25°C
100°C
20
15
10
5
0
23 4 5 6 7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
0.16
VGS = 10 V
0.14
TJ = 100°C
0.12
0.1 25°C
0.08
-55°C
0.06
0.04
0.02
0 5 10 15 20 25 30 35 40 45
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.12
TJ = 25°C
0.115
0.11
0.105
0.1
VGS = 10 V
0.095
0.09
15 V
0.085
0.08
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
1.6 VGS = 10 V
1.4 ID = 11.5 A
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100
VGS = 0 V
TJ = 125°C
10
1
0 10 20 30 40 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
60
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3
Page 3

MTP23P06V
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain–gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG – VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn–on and turn–off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG – VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off–state condition when
calculating td(on) and is read at a voltage corresponding to the
on–state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
4000
Ciss VDS = 0 V
VGS = 0 V
TJ = 25°C
3000
Crss
2000
Ciss
1000
Coss
0
10 5
Crss
05
VGS VDS
10 15 20 25
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
http://onsemi.com
4
Page 4
Part Number MTP23P06V
Manufactur ON Semiconductor
Description Power MOSFET 23 Amps
Total Page 8 Pages
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