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Motorola
Motorola

MRF492 Datasheet

RF POWER TRANSISTOR NPN SILICON


MRF492 Datasheet Preview


MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 12.5 volt low band VHF large–signal power amplifier applica-
tions in commercial and industrial FM equipment.
Specified 12.5 V, 50 MHz Characteristics —
Output Power = 70 W
Minimum Gain = 11 dB
Efficiency = 50%
Load Mismatch Capability at High Line and RF Overdrive
Order this document
by MRF492/D
MRF492
70 W, 50 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
Characteristic
Thermal Resistance, Junction to Case (2)
Value
18
36
4.0
20
250
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
RθJC
CASE 211–11, STYLE 1
Max Unit
0.7 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)
V(BR)CEO
18
— Vdc
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
V(BR)CES
36
— Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
— Vdc
Collector Cutoff Current (VCE = 13.6 Vdc, VBE = 0)
ICES
20 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE 10 — 150 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob — 275 450 pF
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz)
GPE 11 13 — dB
η 50 — — %
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF492
1
Page 1

RF
INPUT
C1 L1
C2 C5
RFC2
+
C6
C7
L2 L3 C8
RFC1
BEAD
DUT
C3
C4
+12.5 Vdc
RF
OUTPUT
C1, C8 — 9.0 – 180 pF, Arco 463
C2, C3, C4 — 80 – 480 pF, Arco 466
C5 — 1000 pF, 350 V, Unelco
C6 — 10 µF, 25 Vdc
C7 — 0.01 µF, Ceramic
RFC1 — 10 µH Molded Choke
RFC2 — 12 Turns, #16 AWG, Enameled Wire Closewound
RFC2 — on a 2.0 W Carbon Resistor
L1 — 2 Turns, #18 AWG Enameled Wire, 0.4ID, 0.15Long
L2 — Loop, #12 AWG Wire, 0.6High, 0.4Wide
L3 — 2 Turns, #12 AWG Wire, ID 0.4, 0.25Long
Bead — Ferrite Bead Ferroxcube #56–590–65/3B
Figure 1. 50 MHz Test Circuit
100
VCC = 12.5 V
80 f = 50 MHz
20
VCC = 12.5 V
18 Pout = 70 W
60 16
40 14
20 12
0
0 1 2 3 4 5 6 7 8 9 10
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
10
20 25 30 35 40 45 50
f, FREQUENCY (MHz)
Figure 3. Power Gain versus Frequency
MRF492
2
MOTOROLA RF DEVICE DATA
Page 2

140
f = 50 MHz
120
100
80
60
40
Pin = 8 W
4W
2W
20
0
7 8 9 10 11 12 13 14 15 16 17
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
– j1.0
0
– j2.0
50
Zin
30
1.0
f = 25 MHz
Zo = 10
2.0
VCC = 12.5 V, Pout = 70 W
f Zin
MHz Ohms
ZOL*
Ohms
25 1.12 – j1.28 0.85 – j1.46
30 0.93 – j1.24 0.76 – j1.3
50 0.7 – j1.17 0.58 – j1.0
1.0 0
2.0 50
3.0
1.0
30
f = 25 MHz ZOL*
2.0
Zo = 10
3.0
ZOL* = Conjugate of the optimum load
ZOL* = impedance into which the device
ZOL* = output operates at a given output
ZOL* = power, voltage and frequency.
4.0
5.0
Figure 5. Series Equivalent Input/Output Impedances
MOTOROLA RF DEVICE DATA
MRF492
3
Page 3
Part Number MRF492
Manufactur Motorola
Description RF POWER TRANSISTOR NPN SILICON
Total Page 4 Pages
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