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Tyco Electronics
Tyco Electronics

MRF428 Datasheet

The RF Line NPN Silicon RF Power Transistor


MRF428 Datasheet Preview


SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high-voltage applications as a high-power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 DB
Efficiency = 45%
Intermodulation Distortion @ 150 W (PEP) —
IMD = -32 db (Max)
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
Order this document
by MRF428/D
MRF428
150 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
Total Device Dissipation @ TC = 25 °C
Derate above 25 °C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
1
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
55
110
110
4.0
Value
55
110
4.0
20
30
320
1.83
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W atts
W/°C
°C
Max Unit
0.5 °C/W
Typ Max
Unit
——
Vdc
——
Vdc
——
Vdc
——
Vdc
(continued)
Page 1

ELECTRICAL CHARACTERISTICS — continued (TC = 25 °C unless otherwise noted.)
Characteristic
Symbol
Min
Typ Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common-Emitter Amplifier Gain
(VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc,
f = 30 MHz)
Output Power
(VCE = 50 Vdc, f = 30 MHz)
hFE
COB
GPE
POUT
Collector Efficiency
(VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc,
f = 30 MHz)
Intermodulation Distortion (1)
(VCE = 50 Vdc, POUT = 150 W (PEP), IC = 3.32 Adc)
η
IMD
Electrical Ruggedness
(VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc,
VSWR 30:1 at all Phase Angles)
Ψ
NOTE:
1. To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
10
30 —
220 250
pF
13
15 —
dB
150 — — W (PEP)
45
——
%
-33 -30
dB
No Degradation in Output Power
C1,C2,C7 — 170-780 pF, Arco 469
C3,C8,C9 — 0.1µF, 100 V Erie
C4 — 500 µF @ 6.0 V
C5 — 9.0-180 pF, Arco 463
C6 — 80-480 pF, Arco 466
C10 — 30 µF, 100 V
R1 — 10 , 10 Watt
R2 — 10 , 1.0 Watt
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16” I.D., 5/16” Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4” I.D.
L4 — 5 Turns, 1/8” Copper Tubing, 9/16” I.D., 3/4” Long
L5 — 10 Ferrite Beads — Ferroxcube #56-590-65/3B
Figure 1. 30 MHz Test Circuit Schematic
2
Page 2

3
Page 3

Figure 10. Series Equivalent Impedance
4
Page 4
Part Number MRF428
Manufactur Tyco Electronics
Description The RF Line NPN Silicon RF Power Transistor
Total Page 5 Pages
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