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MJL21195 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS


MJL21195 Datasheet Preview


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MJL21195, MJL21196
Preferred Device
Silicon Power Transistors
The MJL21195 and MJL21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Total Harmonic Distortion Characterized
High DC Current Gain hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.50 A, 80 V, 1 Second
Epoxy Meets UL 94, V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
CollectorEmitter Voltage 1.5 V
Collector Current Continuous
Collector Current Peak (Note 1)
VCEO 250 Vdc
VCBO 400 Vdc
VEBO 5 Vdc
VCEX 400 Vdc
IC 16 Adc
30
Base Current Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
IB 5 Adc
PD 200 W
1.43 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
0.7 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
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16 A COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 V, 200 W
MARKING
DIAGRAM
MJLxxxx
AYYWWG
TO264
CASE 340G
STYLE 2
xxxx = 21195 or 21196
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 3
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJL21195/D
Page 1

MJL21195, MJL21196
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (Note 2)
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
OFF CHARACTERISTICS (Note 3)
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
SECOND BREAKDOWN (Note 3)
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (Nonrepetitive)
(VCE = 80 Vdc, t = 1 s (Nonrepetitive)
ON CHARACTERISTICS (Note 3)
IS/b
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
DYNAMIC CHARACTERISTICS (Note 3)
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
THD
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
Cob
Min
250
4.0
2.25
25
8.0
4
Typical
0.8
0.08
Max
100
100
100
100
2.2
1.4
4
500
PNP MJL21195
6.5
6.0
VCE = 10 V
5.5
5.0
4.5 VCE = 5 V
4.0
3.5
3.0
TJ = 25°C
ftest = 1 MHz
2.5
2.0
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 1. Typical Current Gain
Bandwidth Product
NPN MJL21196
7.5
7.0
6.5 VCE = 10 V
6.0
5.5
5.0 VCE = 5 V
4.5
4.0
3.5
3.0
2.5 TJ = 25°C
2.0 ftest = 1 MHz
1.5
1.0
10 0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 2. Typical Current Gain
Bandwidth Product
Unit
Vdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
%
MHz
pF
10
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2
Page 2

MJL21195, MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
1000
NPN MJL21196
1000
TJ = 100°C
100
25°C
−25 °C
VCE = 20 V
10
0.1 1.0
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, VCE = 20 V
100
100 TJ = 100°C
25°C
−25 °C
VCE = 20 V
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain, VCE = 20 V
100
PNP MJL21195
1000
NPN MJL21196
1000
TJ = 100°C
100
25°C
−25 °C
VCE = 5 V
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain, VCE = 5 V
PNP MJL21195
30
2.0 A
25
1.5 A
20 1.0 A
15 IB = 0.5 A
100
100 TJ = 100°C
25°C
−25 °C
VCE = 5 V
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain, VCE = 5 V
NPN MJL21196
30
2.0 A
25 1.5 A
1.0 A
20
IB = 0.5 A
15
100
10 10
5.0
TJ = 25°C
0
0 5.0 10 15 20 25
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 7. Typical Output Characteristics
5.0
0
0
TJ = 25°C
5.0 10 15 20
VCE, COLLECTOREMITTER VOLTAGE (V)
25
Figure 8. Typical Output Characteristics
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3
Page 3

MJL21195, MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
NPN MJL21196
3.0
2.5 TJ = 25°C
IC/IB = 10
1.4
TJ = 25°C
1.2 IC/IB = 10
2.0 1.0 VBE(sat)
1.5 0.8
1.0
0.5
0
0.1
VBE(sat)
VCE(sat)
1.0 10
IC, COLLECTOR CURRENT (A)
0.6
0.4
0.2
0
100 0.1
VCE(sat)
1.0 10
IC, COLLECTOR CURRENT (A)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
100
PNP MJL21195
10
TJ = 25°C
NPN MJL21196
10
TJ = 25°C
1.0 1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0 10
IC, COLLECTOR CURRENT (A)
Figure 11. Typical BaseEmitter Voltage
100
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0 10
IC, COLLECTOR CURRENT (A)
Figure 12. Typical BaseEmitter Voltage
100
100
10
1.0
0.1
1.0
10 ms
1 Sec
50 ms
250 ms
10 100
VCE, COLLECTOREMITTER VOLTAGE (V)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150°C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
1000
Figure 13. Active Region Safe Operating Area
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4
Page 4
Part Number MJL21195
Manufactur ON
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Total Page 8 Pages
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