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NXP
NXP

M1102 Datasheet

PNP transistor/Schottky-diode module


M1102 Datasheet Preview


DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZTM1102
PNP transistor/Schottky-diode
module
Product specification
File under Discrete Semiconductors, SC01
1996 May 09
Page 1

Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PZTM1102
FEATURES
Low output capacitance
Fast switching time
Integrated Schottky protection
diode.
APPLICATIONS
High-speed switching for industrial
applications.
PINNING
PIN DESCRIPTION
1 cathode Schottky
2 base
3 emitter
4 collector, anode Schottky
DESCRIPTION
Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.
handbook, halfpage
4
1
1
Top view
2
3
4
2
MAM237
3
Marking code: TM1102.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
PNP transistor
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Schottky barrier diode
VR
IF
IF(AV)
P
continuous reverse voltage
forward current (DC)
average forward current
power dissipation
Tj junction temperature
Combined device
Ptot
Tamb
Tstg
Tj
total power dissipation
operating ambient temperature
storage temperature
junction temperature
open emitter
VBE = 0
open collector
up to Tamb = 25 °C; note 1
reverse current applied
forward current applied
up to Tamb = 25 °C; note 2
− −40 V
− −40 V
− −6 V
− −200 mA
40 V
1A
1A
0.5 W
125 °C
150 °C
1.2 W
55 +150 °C
55 +150 °C
150 °C
Notes
1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.
1996 May 09
2
Page 2

Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PZTM1102
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
NPN transistor
V(BR)CBO
V(BR)CES
V(BR)EBO
ICES
IEBO
VCEsat
VCEsat
VBEsat
VBEsat
Cob
Cib
fT
hFE
hFE
collector-base breakdown
voltage
collector-emitter
breakdown voltage
emitter-base breakdown
voltage
collector-emitter cut-off
current
emitter-base cut-off current
collector-emitter saturation
voltage
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter saturation
voltage
output capacitance
input capacitance
transition frequency
DC current gain
DC current gain
open emitter; IC = 10 µA; IE = 0;
Tamb = 55 to +150 °C; note 1
open base; IC = 1 mA; VBE = 0;
Tamb = 55 to +150 °C; note 1
open collector; IE = 10 µA; IC = 0;
Tamb = 55 to +150 °C; note 1
VCE = 20 V; VBE = 0
VCE = 20 V; VBE = 0; Tamb = 55 to +150 °C
VEB = 6 V; IC = 0
VEB = 6 V; IC = 0; Tamb = 55 to +150 °C
note 1
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 3.2 mA
Tamb = 55 to +150 °C; note 1
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 3.2 mA
note 1
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
Tamb = 55 to +150 °C; note 1
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
VCE = 1 V; note 1
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 100 mA
VCE = 1 V; Tamb = 55 to +150 °C; note 1
IC = 10 mA
IC = 100 mA
40
40
6
250
40
70
100
30
60
15
SWITCHING TIMES (see Figs 2 and 3)
td delay time
tr rise time
ts storage time
tf fall time
VCC = 5 V
IC = 50 mA
Vi = 0 to 5 V
3
13
200
50
MAX. UNIT
V
V
V
100 nA
50 µA
50 nA
10 µA
200
300
mV
mV
250
350
mV
mV
850
950
mV
mV
1.0 V
1.1 V
4.5 pF
10 pF
MHz
300
500
7 ns
23 ns
380 ns
80 ns
1996 May 09
3
Page 3

Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PZTM1102
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Schottky barrier diode
VF forward voltage
IF = 100 mA; note 1
330 mV
IF = 100 mA; Tamb = 55 to +150 °C; note 1
400 mV
IF = 1 A; note 1
500 mV
IF = 1 A; Tamb = 55 to +150 °C; note 1
560 mV
IR reverse current
VR = 40 V; note 1
300 µA
VR = 40 V; Tj = 125 °C;
Tamb = 55 to +150 °C; note 1
35(2)
mA
IR reverse current
VR = 10 V; note 1
40 µA
VR = 10 V; Tj = 125 °C;
Tamb = 55 to +150 °C; note 1
15(2)
mA
Cj
junction capacitance
VR = 0 V; f = 1 MHz
250 pF
Notes
1. Measured under pulsed conditions: tp 300 µs; δ ≤ 0.01.
2. Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal
runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with
forward voltage applied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-a
thermal resistance from junction to ambient (for the transistor)
note 1
thermal resistance from junction to ambient (for the Schottky diode) note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
250
UNIT
K/W
K/W
1996 May 09
4
Page 4
Part Number M1102
Manufactur NXP
Description PNP transistor/Schottky-diode module
Total Page 7 Pages
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