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National Semiconductor
National Semiconductor

LM299 Datasheet

Precision Reference


LM299 Datasheet Preview


May 1999
LM199/LM299/LM399/LM3999
Precision Reference
General Description
The LM199 series are precision, temperature-stabilized
monolithic zeners offering temperature coefficients a factor
of ten better than high quality reference zeners. Constructed
on a single monolithic chip is a temperature stabilizer circuit
and an active reference zener. The active circuitry reduces
the dynamic impedance of the zener to about 0.5and al-
lows the zener to operate over 0.5 mA to 10 mA current
range with essentially no change in voltage or temperature
coefficient. Further, a new subsurface zener structure gives
low noise and excellent long term stability compared to ordi-
nary monolithic zeners. The package is supplied with a ther-
mal shield to minimize heater power and improve tempera-
ture regulation.
The LM199 series references are exceptionally easy to use
and free of the problems that are often experienced with or-
dinary zeners. There is virtually no hysteresis in reference
voltage with temperature cycling. Also, the LM199 is free of
voltage shifts due to stress on the leads. Finally, since the
unit is temperature stabilized, warm up time is fast.
The LM199 can be used in almost any application in place of
ordinary zeners with improved performance. Some ideal ap-
plications are analog to digital converters, calibration stan-
dards, precision voltage or current sources or precision
power supplies. Further in many cases the LM199 can re-
place references in existing equipment with a minimum of
wiring changes.
The LM199 series devices are packaged in a standard her-
metic TO-46 package inside a thermal shield. The LM199 is
rated for operation from −55˚C to +125˚C while the LM299 is
rated for operation from −25˚C to +85˚C and the LM399 is
rated from 0˚C to +70˚C.
The LM3999 is packaged in a standard TO-92 package and
is rated from 0˚C to +70˚C
Features
n Guaranteed 0.0001%/˚C temperature coefficient
n Low dynamic impedance — 0.5
n Initial tolerance on breakdown voltage — 2%
n Sharp breakdown at 400 µA
n Wide operating current — 500 µA to 10 mA
n Wide supply range for temperature stabilizer
n Guaranteed low noise
n Low power for stabilization — 300 mW at 25˚C
n Long term stability — 20 ppm
n Proven reliability, low-stress packaging in TO-46
integrated-circuit hermetic package, for low hysteresis
after thermal cycling. 33 million hours MTBF at TA =
+25˚C (TJ = +86˚C)
n Certified long term stability available
n MIL-STD-883 compliant
Connection Diagrams
Metal Can Package (TO-46)
Plastic Package TO-92
DS005717-14
Top View
LM199/LM299/LM399 (See Table on fourth page)
NS Package Number H04D
DS005717-10
Bottom View
LM3999 (See Table on fourth page)
NS Package Number Z03A
© 1999 National Semiconductor Corporation DS005717
www.national.com
Page 1

Functional Block Diagrams
LM199/LM299/LM399
DS005717-15
LM3999
DS005717-11
www.national.com
2
Page 2

Absolute Maximum Ratings (Note 1)
Specifications for Military/Aerospace products are not
contained in this datasheet. Refer to the following Reli-
ability Electrical Test Specifications documents:
RETS199X for LM199, RETS199AX for LM199A.
Temperature Stabilizer Voltage
LM199/LM299/LM399
LM3999
Reverse Breakdown Current
Forward Current
LM199/LM299/LM399
LM3999
40V
36V
20 mA
1 mA
−0.1 mA
Reference to Substrate Voltage V(RS) (Note 2)
40V
−0.1V
Operating Temperature Range
LM199
−55˚C to +125˚C
LM299
−25˚C to +85˚C
LM399/LM3999
−0˚C to +70˚C
Storage Temperature Range
−55˚C to +150˚C
Soldering Information
TO-92 package (10 sec.)
+260˚C
TO-46 package (10 sec.)
+300˚C
Electrical Characteristics (Notes 3, 6)
Parameter
Conditions
LM199H/LM299H
LM399H
Units
Min Typ
Max Min Typ
Max
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Change with Current
0.5 mA IR 10 mA
0.5 mA IR 10 mA
6.8 6.95
6
7.1 6.6 6.95
96
7.3 V
12 mV
Reverse Dynamic Impedance
Reverse Breakdown
Temperature Coefficient
RMS Noise
IR = 1 mA
−55˚CTA+85˚C
+85˚CTA+125˚C
−25˚CTA85˚C
0˚CTA+70˚C
10 Hz f 10 kHz
LM199
LM299
LM399
0.5
0.00003
0.0005
0.00003
1
0.0001
0.0015
0.0001
7 20
0.5
0.00003
7
1.5
0.0002
50
%/˚C
%/˚C
%/˚C
%/˚C
µV
Long Term Stability
Temperature Stabilizer
Supply Current
Temperature Stabilizer
Stabilized, 22˚CTA28˚C,
1000 Hours, IR=1 mA±0.1%
TA=25˚C, Still Air, VS=30V
TA =− 55˚C
9
20
8.5
22
20
14 8.5
28
40 9
ppm
15 mA
40 V
Supply Voltage
Warm-Up Time to 0.05%
Initial Turn-on Current
VS = 30V, TA = 25˚C
9VS40, TA=+25˚C, (Note 4)
3
140 200
3 sec.
140 200 mA
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Electrical Characteristics (Note 3)
Parameter
Conditions
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Change with Current
Reverse Dynamic Impedance
Reverse Breakdown
Temperature Coefficient
RMS Noise
Long Term Stability
Temperature Stabilizer
Temperature Stabilizer
Supply Voltage
Warm-Up Time to 0.05%
0.6 mA IR 10 mA
0.6 mA IR 10 mA
IR = 1 mA
0˚C TA 70˚C
10 Hz f 10 kHz
Stabilized, 22˚C TA 28˚C,
1000 Hours, IR = 1 mA ±0.1%
TA = 25˚C, Still Air, VS = 30V
VS = 30V, TA = 25˚C
3
LM3999Z
Min Typ
Max
6.6 6.95
7.3
6 20
Units
V
mV
0.6
0.0002
2.2
0.0005
%/˚C
7 µV
20 ppm
12 18 mA
36 V
5 sec.
www.national.com
Page 3
Part Number LM299
Manufactur National Semiconductor
Description Precision Reference
Total Page 12 Pages
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